TIM1414-18L-252

MICROWAVE POWER GaAs FET TIM1414-18L-252 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 6.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 36dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS1 VDS= 9V IDSset= 4.4A f= 13.75 to 14.5GHz UNIT dBm dB A Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 36dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 41.5 5.0   -25   TYP. MAX. 42.0  6.0  5.5 6.0 28    5.5 6.0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -145A Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  4.5  V -0.7 -2.8 -4.5 A  10.0 11.5 V -5 °C/W    1.8 2.3  The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Systems & Solutions Corporation (hereinafter, r...