TIM8596-8

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 8.5GHz to 9.6GHz ･HIGH GAIN G1dB= 6.0dB at 8.5GHz to 9.6GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM8596-8 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current SYMBOL CONDITIONS P1dB G1dB IDS VDS= 9V IDSset= 4.0A f = 8.5 to 9.6GHz UNIT dBm dB A Power Added Efficiency add % Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 38.5 5.0    TYP. MAX. 39.5  6.0  3.4 4.4 22   80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V VGSO IGS= -120A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  2.4  V -2.0 -3.5 -5.0 A  8.0  V -5   °C/W  1.6 2.5  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained ...