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TIM1314-15UL Dataheets PDF



Part Number TIM1314-15UL
Manufacturers Toshiba
Logo Toshiba
Description MICROWAVE POWER GaAs FET
Datasheet TIM1314-15UL DatasheetTIM1314-15UL Datasheet (PDF)

MICROWAVE POWER GaAs FET TIM1314-15UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB I.

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MICROWAVE POWER GaAs FET TIM1314-15UL FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN G1dB= 7.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.0A f= 13.75 to 14.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 30dBm, f= 5MHz dBc (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 41.0 6.0    -42   TYP. MAX. 42.0  7.0  4.0 5.0  0.8 32  -45  4.0 5.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -145A Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  4.0  V -0.5 -2.0 -4.5 A  8.0  V -5 °C/W    2.0 2.5  The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. ©2019 Toshiba Infrastructure Systems & Solutions Corporation 1_20190927_No1176 Page: 1 / 8 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) MICROWAVE POWER GaAs FET TIM1314-15UL CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current Total Power Dissipation (Tc= 25°C) Channel Temperature Storage IDS A 11.4 PT W 60 Tch °C 175 Tstg °C -65 to +175 PACKAGE OUTLINE ( 2-11C1B ) Unit in mm ① Gate ② Source ③ Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C. ©2019 Toshiba Infrastructure Systems & Solutions Corporation 1_20190927_No1176 Page: 2 / 8 Pout (dBm) Gain (dB) TYPICAL RF PERFORMANCE ŋPout , Gain , PAE , IDS vs. Pin MICROWAVE POWER GaAs FET TIM1314-15UL VDS= 10 V, IDSset= 4.0 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 ℃ Pout vs Pin VDS=10V,IDS=4Aset 48 13.75GHz 44 14.1GHz 14.5GHz 40 36 32 28 24 16 20 24 28 32 36 40 Pin (dBm) Gain vs Pin VDS=10V,IDS=4Aset 24 13.75GHz 20 14.1GHz 14.5GHz 16 12 8 4 0 16 20 24 28 32 36 40 Pin (dBm) PAE vs Pin VDS=10V,IDS=4Aset 60 13.75GHz 14.1GHz 50 14.5GHz 40 30 20 10 0 16 20 24 28 32 36 40 Pin (dBm) IDS vs Pin VDS=10V,IDS=4Aset 12 13.75GHz 14.1GHz 10 14.5GHz 8 6 4 2 0 16 20 24 28 32 36 40 Pin (dBm) PAE (%) IDS (A) ©2019 Toshiba Infrastructure Systems & Solutions Corporation 1_20190927_No1176 Page: 3 / 8 IM3 (dBc) IM5 (dBc) ŋIM3, IM5 vs. Pout MICROWAVE POWER GaAs FET TIM1314-15UL VDS= 10 V, IDSset= 4.0 A, f= 13.75, 14.1, 14.5 GHz, Δf= 5 MHz , Ta= +25 ℃ IM3 vs Pout VDS=10V, IDS=4.0A -20 -30 -40 -50 -60 -70 20 7.75GHz 8.1GHz 8.85GHz 25 30 35 40 45 Pout (dBm) @S.C.L IM5 vs Pout VDS=10V, IDS=4.0A -20 7.75GHz 8.1GHz -30 8.85GHz -40 -50 -60 -70 20 25 30 35 40 45 Pout (dBm) @S.C.L ŋPout vs. Frequency VDS= 10 V, IDSset= 4.0 A, Ta= +25 ℃ Pout vs Freq VDS=10V, IDS=4A 48 35dBm 44 33dBm 31dBm 40 29dBm 27dBm 36 25dBm 32 23dBm 21dBm 28 19dBm 17dBm 24 13.5 13.7 13.9 14.1 14.3 14.5 14.7 f (GHz) Pout (dBm) ©2019 Toshiba Infrastructure Systems & Solutions Corporation 1_20190927_No1176 Page: 4 / 8 Pout (dBm) Gain (dB) ŋPout , Gain , PAE , IDS vs. Pin vs. IDSset MICROWAVE POWER GaAs FET TIM1314-15UL VDS= 10 V, IDSset= 3.5, 4.0, 4.5 A, f= 14.1 GHz, Ta= +25 ℃ Pout vs Pin VDS=10V,f=14.1GHz 48 3.5Aset 44 4Aset 4.5Aset 40 36 32 28 24 16 20 24 28 32 36 40 Pin (dBm) Gain vs Pin VDS=10V,f=14.1GHz 24 3.5Aset 20 4Aset 4.5Aset 16 12 8 4 0 16 20 24 28 32 36 40 Pin (dBm) PAE vs Pin VDS=10V,f=14.1GHz 60 3.5Aset 50 4Aset 4.5Aset 40 30 20 10 0 16 20 24 28 32 36 40 Pin (dBm) IDS vs Pin VDS=10V,f=14.1GHz 12 3.5Aset 10 4Aset 4.5Aset 8 6 4 2 0 16 20 24 28 32 36 40 Pin (dBm) PAE (%) IDS (A) ©2019 Toshiba Infrastructure Systems & Solutions Corporation 1_20190927_No1176 Page: 5 / 8 Pout (dBm) Gain (dB) ŋPout , .


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