Document
MICROWAVE POWER GaAs FET
TIM1314-15UL
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 42.0dBm at 13.75GHz to 14.5GHz ŋHIGH GAIN
G1dB= 7.0dB at 13.75GHz to 14.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -42dBc(Min.) at Pout= 30dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 4.0A f= 13.75 to 14.5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test Po= 30dBm, f= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 41.0 6.0 -42
TYP. MAX.
42.0
7.0
4.0
5.0
0.8
32
-45
4.0
5.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -145A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
4.0
V
-0.5 -2.0 -4.5
A
8.0
V
-5
°C/W
2.0
2.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
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ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM1314-15UL
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current Total Power Dissipation (Tc= 25°C) Channel Temperature Storage
IDS
A
11.4
PT
W
60
Tch
°C
175
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 2-11C1B )
Unit in mm
① Gate ② Source ③ Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C.
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Pout (dBm) Gain (dB)
TYPICAL RF PERFORMANCE
ŋPout , Gain , PAE , IDS vs. Pin
MICROWAVE POWER GaAs FET
TIM1314-15UL
VDS= 10 V, IDSset= 4.0 A, f= 13.75, 14.1, 14.5 GHz, Ta= +25 ℃
Pout vs Pin
VDS=10V,IDS=4Aset 48
13.75GHz
44
14.1GHz 14.5GHz
40
36
32
28
24
16 20 24 28 32 36 40 Pin (dBm)
Gain vs Pin
VDS=10V,IDS=4Aset 24
13.75GHz
20
14.1GHz 14.5GHz
16
12
8
4
0 16 20 24 28 32 36 40 Pin (dBm)
PAE vs Pin
VDS=10V,IDS=4Aset 60
13.75GHz
14.1GHz
50
14.5GHz
40
30
20
10
0 16 20 24 28 32 36 40 Pin (dBm)
IDS vs Pin
VDS=10V,IDS=4Aset 12
13.75GHz
14.1GHz
10
14.5GHz
8
6
4
2
0 16 20 24 28 32 36 40 Pin (dBm)
PAE (%) IDS (A)
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IM3 (dBc) IM5 (dBc)
ŋIM3, IM5 vs. Pout
MICROWAVE POWER GaAs FET
TIM1314-15UL
VDS= 10 V, IDSset= 4.0 A, f= 13.75, 14.1, 14.5 GHz, Δf= 5 MHz , Ta= +25 ℃
IM3 vs Pout VDS=10V, IDS=4.0A -20
-30
-40
-50
-60
-70 20
7.75GHz 8.1GHz 8.85GHz
25 30 35 40 45 Pout (dBm) @S.C.L
IM5 vs Pout
VDS=10V, IDS=4.0A
-20
7.75GHz
8.1GHz
-30
8.85GHz
-40
-50
-60
-70 20 25 30 35 40 45 Pout (dBm) @S.C.L
ŋPout vs. Frequency VDS= 10 V, IDSset= 4.0 A, Ta= +25 ℃
Pout vs Freq VDS=10V, IDS=4A 48
35dBm
44
33dBm
31dBm
40
29dBm
27dBm 36
25dBm
32
23dBm
21dBm
28
19dBm
17dBm 24
13.5 13.7 13.9 14.1 14.3 14.5 14.7 f (GHz)
Pout (dBm)
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Pout (dBm) Gain (dB)
ŋPout , Gain , PAE , IDS vs. Pin vs. IDSset
MICROWAVE POWER GaAs FET
TIM1314-15UL
VDS= 10 V, IDSset= 3.5, 4.0, 4.5 A, f= 14.1 GHz, Ta= +25 ℃
Pout vs Pin
VDS=10V,f=14.1GHz
48
3.5Aset
44
4Aset 4.5Aset
40
36
32
28
24
16 20 24 28 32 36 40 Pin (dBm)
Gain vs Pin
VDS=10V,f=14.1GHz
24
3.5Aset
20
4Aset 4.5Aset
16
12
8
4
0 16 20 24 28 32 36 40 Pin (dBm)
PAE vs Pin
VDS=10V,f=14.1GHz
60
3.5Aset
50
4Aset 4.5Aset
40
30
20
10
0 16 20 24 28 32 36 40 Pin (dBm)
IDS vs Pin
VDS=10V,f=14.1GHz
12 3.5Aset
10
4Aset 4.5Aset
8
6
4
2
0 16 20 24 28 32 36 40 Pin (dBm)
PAE (%) IDS (A)
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Pout (dBm) Gain (dB)
ŋPout , .