MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4G...
Description
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 6.4GHz to 7.2GHz ・HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-4UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 ∆G
VDS= 10V IDSset= 0.9A f = 6.4 to 7.2GHz
UNIT dBm dB
A dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
∆Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150 Ω
MIN. 35.5 8.5 -44
TYP. MAX.
36.5
9.5
1.1
1.3
±0.6
36
-47
1.1
1.3
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 1.5A
VDS= 3V IDS= 15mA
VDS= 3V VGS= 0V
VGSO IGS= -50µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
0.9
V
-1.0 -2.5 -4.0
A
2.6
V
-5
°C/W
4.5
6.0
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other...
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