Document
MICROWAVE POWER GaAs FET
TIM0910-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN
G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION
IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 7.0A f= 9.5 to 10.5GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test
dBc
Po= 38dBm, f= 5MHz
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance (Rg): 10
MIN. 44.0 6.0 -25
TYP. MAX.
45.0
7.0
10.0 11.5
0.8
25
9.0 10.1
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V
VGSO IGS= -290A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
5.5
V
-0.7 -2.0 -4.5
A
20.0
V
-5
°C/W
1.0
1.1
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
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ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM0910-30L
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage Gate-Source Voltage
VDS
V
15
VGS
V
-5
Drain Current Total Power Dissipation (Tc= 25°C) Channel Temperature Storage
IDS
A
20
PT
W
136
Tch
°C
175
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA03B )
Unit in mm
Gate Source Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C.
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TYPICAL RF PERFORMANCE
ŋPout , Gain , PAE , IDS vs. Pin
MICROWAVE POWER GaAs FET
TIM0910-30L
VDS= 10 V, IDSset= 7.0 A, f= 9.5, 10.0, 10.5 GHz, Ta= +25 ℃
Pout vs Pin
VDS=10V, IDS=7.0A 52
9.5GHz
48
10.0GHz 10.5GHz
44
40
36
32
28
18 22 26 30 34 38 42 Pin (dBm)
Gain vs Pin
VDS=10V, IDS=7.0A 20
9.5GHz
10.0GHz
16
10.5GHz
12
8
4
0 18 22 26 30 34 38 42 Pin (dBm)
Pout (dBm) Gain (dB)
PAE (%) IDS (A)
PAE vs Pin
VDS=10V, IDS=7.0A 60
9.5GHz
50
10.0GHz 10.5GHz
40
30
20
10
0
18 22 26 30 34 38 42 Pin (dBm)
IDS vs Pin
VDS=10V, IDS=7.0A 14
9.5GHz
10.0GHz
12
10.5GHz
10
8
6
4 18 22 26 30 34 38 42 Pin (dBm)
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MICROWAVE POWER GaAs FET
TIM0910-30L
ŋIM3 vs. Pout
VDS= 10 V, IDSset= 7.0 A, f= 9.5, 10.0, 10.5 GHz, Δf= 5 MHz , Ta= +25 ℃
IM3 vs Pout VDS=10V, IDS=7.0A -20
-30
-40
-50
-60
-70 20
9.5GHz 10.0GHz 10.5GHz
25 30 35 40 45 Pout (dBm) @S.C.L
IM3 (dBc)
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ŋS-Parameters VDS= 10 V, IDSset= 7.0 A, f= 7.0 to 12.0 GHz, Ta= +25 ℃
MICROWAVE POWER GaAs FET
TIM0910-30L
S11, S22(dB) S21, S12(dB)
0 -5 -10 -15 -20 -25
7
S11, S22 VDS=10V, IDS=7.0A
S11 S22
8
9 10 11 12
f(GHz)
15 10
5 0 -5 -10 -15 -20 -25 -30 -35
7
S21, S12 VDS=10V, IDS=7.0A
S21 S12
8
9 10 11 12
f(GHz)
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MICROWAVE POWER GaAs FET
TIM0910-30L
RESTRICTIONS ON PRODUCT USE
ŋAll presented data are typical curves/values and for reference only as design guidance. ŋDevices are not necessarily guaranteed at these curves and values. ŋTISS, and its subsidiaries and affiliates (collectively “TISS”), reserve the right to make changes to the information in
this document, and related hardware, software and systems (collectively “Product”) without notice. ŋThis document and any information herein may not be reproduced without prior written permission from TISS.
Even with TISS’s written.