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TIM0910-30L Dataheets PDF



Part Number TIM0910-30L
Manufacturers Toshiba
Logo Toshiba
Description MICROWAVE POWER GaAs FET
Datasheet TIM0910-30L DatasheetTIM0910-30L Datasheet (PDF)

MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1.

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MICROWAVE POWER GaAs FET TIM0910-30L FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.0dBm at 9.5GHz to 10.5GHz ŋHIGH GAIN G1dB= 7.0dB at 10.5GHz to 10.5GHz ŋLOW INTERMODULATION DISTORTION IM3= -25dBc (Min.) at Pout= 38dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 7.0A f= 9.5 to 10.5GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test dBc Po= 38dBm, f= 5MHz (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance (Rg): 10  MIN. 44.0 6.0    -25   TYP. MAX. 45.0  7.0  10.0 11.5  0.8 25    9.0 10.1  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V VGSO IGS= -290A Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  5.5  V -0.7 -2.0 -4.5 A  20.0  V -5 °C/W    1.0 1.1  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. Copyright © 2019 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20190314_No1311 Page: 1 / 6 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) MICROWAVE POWER GaAs FET TIM0910-30L CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage Gate-Source Voltage VDS V 15 VGS V -5 Drain Current Total Power Dissipation (Tc= 25°C) Channel Temperature Storage IDS A 20 PT W 136 Tch °C 175 Tstg °C -65 to +175 PACKAGE OUTLINE ( 7-AA03B ) Unit in mm  Gate  Source  Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C. Copyright © 2019 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20190314_No1311 Page: 2 / 6 TYPICAL RF PERFORMANCE ŋPout , Gain , PAE , IDS vs. Pin MICROWAVE POWER GaAs FET TIM0910-30L VDS= 10 V, IDSset= 7.0 A, f= 9.5, 10.0, 10.5 GHz, Ta= +25 ℃ Pout vs Pin VDS=10V, IDS=7.0A 52 9.5GHz 48 10.0GHz 10.5GHz 44 40 36 32 28 18 22 26 30 34 38 42 Pin (dBm) Gain vs Pin VDS=10V, IDS=7.0A 20 9.5GHz 10.0GHz 16 10.5GHz 12 8 4 0 18 22 26 30 34 38 42 Pin (dBm) Pout (dBm) Gain (dB) PAE (%) IDS (A) PAE vs Pin VDS=10V, IDS=7.0A 60 9.5GHz 50 10.0GHz 10.5GHz 40 30 20 10 0 18 22 26 30 34 38 42 Pin (dBm) IDS vs Pin VDS=10V, IDS=7.0A 14 9.5GHz 10.0GHz 12 10.5GHz 10 8 6 4 18 22 26 30 34 38 42 Pin (dBm) Copyright © 2019 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20190314_No1311 Page: 3 / 6 MICROWAVE POWER GaAs FET TIM0910-30L ŋIM3 vs. Pout VDS= 10 V, IDSset= 7.0 A, f= 9.5, 10.0, 10.5 GHz, Δf= 5 MHz , Ta= +25 ℃ IM3 vs Pout VDS=10V, IDS=7.0A -20 -30 -40 -50 -60 -70 20 9.5GHz 10.0GHz 10.5GHz 25 30 35 40 45 Pout (dBm) @S.C.L IM3 (dBc) Copyright © 2019 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20190314_No1311 Page: 4 / 6 ŋS-Parameters VDS= 10 V, IDSset= 7.0 A, f= 7.0 to 12.0 GHz, Ta= +25 ℃ MICROWAVE POWER GaAs FET TIM0910-30L S11, S22(dB) S21, S12(dB) 0 -5 -10 -15 -20 -25 7 S11, S22 VDS=10V, IDS=7.0A S11 S22 8 9 10 11 12 f(GHz) 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 7 S21, S12 VDS=10V, IDS=7.0A S21 S12 8 9 10 11 12 f(GHz) Copyright © 2019 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20190314_No1311 Page: 5 / 6 MICROWAVE POWER GaAs FET TIM0910-30L RESTRICTIONS ON PRODUCT USE ŋAll presented data are typical curves/values and for reference only as design guidance. ŋDevices are not necessarily guaranteed at these curves and values. ŋTISS, and its subsidiaries and affiliates (collectively “TISS”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. ŋThis document and any information herein may not be reproduced without prior written permission from TISS. Even with TISS’s written.


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