GaN HEMT. TGI9098-100P Datasheet

TGI9098-100P HEMT. Datasheet pdf. Equivalent

Part TGI9098-100P
Description MICROWAVE POWER GaN HEMT
Feature FEATURES ŋINTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 50.0dBm at Pin= 42dBm ŋHIGH GAIN GL= 12.0dB at 9.
Manufacture Toshiba
Datasheet
Download TGI9098-100P Datasheet



TGI9098-100P
FEATURES
ŋINTERNALLY MATCHED HEMT
ŋHIGH POWER
Pout= 50.0dBm at Pin= 42dBm
ŋHIGH GAIN
GL= 12.0dB at 9.0GHz to 9.8GHz
ŋHERMETICALLY SEALED PACKAGE
ŋPULSE OPERATION
Pulse width= 100μs, Duty cycle= 10%
MICROWAVE POWER GaN HEMT
TGI9098-100P
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power (pulsed)
Drain Current (pulsed)
Power Added Efficiency
SYMBOL
Pout
IDS1
add
CONDITIONS
VDS= 24V
IDSset= 6A
f= 9.0 to 9.8 GHz
@Pin= 42dBm
Pulse width=100μs
Duty cycle=10%
Linear Gain
GL
@Pin= 35dBm
Recommended Gate Resistance (Rg): 10
UNIT MIN. TYP. MAX.
dBm
A
%
dB
49.0
50.0
10.0
40
12.0
13.0
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
SYMBOL
gm
VGSoff
CONDITIONS
VDS= 5V
IDS= 10.0A
VDS= 5V
IDS= 46mA
VGSO IGS= -20mA
Thermal Resistance
(*) measured at CW condition
Rth(c-c) Channel to Case(*)
UNIT MIN. TYP. MAX.
S
9
V
-1
-4
-6
V
-10
°C/W
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20190926_No1313 Page: 1 / 6



TGI9098-100P
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI9098-100P
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
50
Gate-Source Voltage
VGS
V
-10
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
IDS
A
40
PT
W
280
Tch
°C
250
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA03B )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20190926_No1313 Page: 2 / 6





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