GaN HEMT. TGI7785-120L Datasheet

TGI7785-120L HEMT. Datasheet pdf. Equivalent

Part TGI7785-120L
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout=.
Manufacture Toshiba
Datasheet
Download TGI7785-120L Datasheet



TGI7785-120L
MICROWAVE POWER GaN HEMT
TGI7785-120L
FEATURES
BROAD BAND INTERNALLY MATCHED HEMT
HIGH POWER
Pout= 51.0dBm at Pin= 44.0dBm
HIGH GAIN
GL= 11.0dB at Pin= 20.0dBm
LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm
Single Carrier Level
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power
Drain Current
Power Added Efficiency
SYMBOL
CONDITIONS
Pout
IDS1
add
VDS= 24V
IDSset= 4.0A
f = 7.7 to 8.5GHz
@Pin= 44dBm
Linear Gain
GL
@Pin= 20dBm
Gain flatness
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
G
IM3
IDS2
Tch
Two-Tone Test
Po= 44.0dBm, f= 5MHz
(Single Carrier Level)
(VDS X IDS + Pin Pout)
X Rth(c-c)
Recommended Gate Resistance(Rg): 28
UNIT
dBm
A
%
dB
dB
dBc
A
°C
MIN.
50.0
10.0
-25
TYP. MAX.
51.0
10.0 12.0
42
11.0
±0.8
-30
8.0
120 140
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
VGSO
Rth(c-c)
CONDITIONS
VDS= 5V
IDS= 10.0A
VDS= 5V
IDS= 46mA
IGS= -20mA
Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-1
-4
-6
V
-10
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 4_20170919_No1260
Page: 1 / 6



TGI7785-120L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI7785-120L
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
50
-10
18
280
250
-65 to +175
PACKAGE OUTLINE (7-AA06A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 4_20170919_No1260
Page: 2 / 6





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