TGI7785-120L

MICROWAVE POWER GaN HEMT TGI7785-120L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 51.0dBm at Pin= 44.0dBm ･HIGH GAIN GL= 11.0dB at Pin= 20.0dBm ･LOW INTERMODULATION DISTORTION IM3(Min.)= -25dBc at Pout= 44.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency SYMBOL CONDITIONS Pout IDS1 add VDS= 24V IDSset= 4.0A f = 7.7 to 8.5GHz @Pin= 44dBm Linear Gain GL @Pin= 20dBm Gain flatness 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise G IM3 IDS2 Tch Two-Tone Test Po= 44.0dBm, f= 5MHz (Single Carrier Level) (VDS X IDS + Pin – Pout) X Rth(c-c) Recommended Gate Resistance(Rg): 28  UNIT dBm A % dB dB dBc A °C MIN. 50.0   10.0  -25   TYP. MAX. 51.0  10.0 12.0 42  11.0   ±0.8 -30   8.0 120 140 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff VGSO Rth(c-c) CONDITIONS VDS= 5V IDS= 10.0A VDS= 5V IDS= 46mA IGS= -20mA Channel to Case UNIT MIN. TYP. MAX. S  8.0  V -1 -4 -6 V -10   °C/W  0.6 0.8  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property righ...