GaN HEMT. TGI5867-25L Datasheet

TGI5867-25L HEMT. Datasheet pdf. Equivalent

Part TGI5867-25L
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI5867-25L FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= .
Manufacture Toshiba
Datasheet
Download TGI5867-25L Datasheet



TGI5867-25L
MICROWAVE POWER GaN HEMT
TGI5867-25L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED HEMT
ŋHIGH POWER
Pout= 44.5dBm at Pin= 35dBm
ŋHIGH GAIN
GL= 13.5dB at Pin= 20dBm
ŋLOW INTERMODULATION DISTORTION
IM3= -40dBc(Min.) at Pout= 29dBm (Single Carrier Level)
ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT MIN. TYP. MAX.
Output Power
Drain Current
Power Added Efficiency
Pout
IDS1
add
VDS= 24V
IDSset= 1.75A
f= 5.85 to 6.75 GHz
@Pin= 35dBm
dBm 44.0 44.5
A
2.7
3.2
%
39
Linear Gain
Gain Flatness
3rd Order Intermodulation
Distortion
Drain Current
Channel Temperature Rise
GL
G
IM3
IDS2
Tch
@Pin= 20dBm
dB
dB
Two-Tone Test
Po= 29dBm, Δf= 5MHz
dBc
(Single Carrier Level)
A
(VDS IDS Pin Pout)
Rth(c-c)
°C
Recommended Gate Resistance(Rg): 60
12.5 13.5
0.8
-40
-42
2.0
130 150
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 5V
IDS= 2.5A
VDS= 5V
IDS= 12mA
VDS= 5V
VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -5mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
1.2
V
-2.6 -4.0 -6.0
A
7.5
V
-10
°C/W
2.8
3.2
The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba
Infrastructure Systems & Solutions Corporation (hereinafter, referred to as “TISS”) for any infringement of patents or
any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual
property right is granted by this document. The information contained herein is subject to change without prior notice.
It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20190927_No1256 Page: 1 / 8



TGI5867-25L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI5867-25L
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
50
Gate-Source Voltage
VGS
V
-10
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
IDS
A
7.5
PT
W
70
Tch
°C
250
Tstg
°C
-65 to +175
PACKAGE OUTLINE ( 7-AA04A )
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
©2019 Toshiba Infrastructure Systems & Solutions Corporation
2_20190927_No1256 Page: 2 / 8





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