TGI7785-130LHA

MICROWAVE POWER GaN HEMT TGI7785-130LHA FEATURES ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 44dBm ŋHIGH GAIN GL= 11.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min.) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 40V IDSset= 0.8A f= 7.7 to 8.5GHz @Pin= 44dBm dBm 50.0 51.0  A  7.0 9.0 %  36  Linear Gain Gain flatness GL @Pin= 20dBm G dB 10.5 11.5  dB   ±0.8 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise *1 IM3 IM3-2 IDS2 Tch Two-Tone Test Po= 44dBm (Single Carrier Level) ∆f= 5MHz (IM3) f= 150MHz (IM3-2) dBc -25 -30  dBc -25 -27  A   5.0 °C  120 140 Recommended Gate Resistance(Rg): 10  *1: ∆Tch  (VDS  IDS2  Pin(two-tone)  Po(two-tone))  Rth(c-c), calculated using parameters of IM3 test ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage SYMBOL gm VGSoff CONDITIONS VDS= 5V IDS= 10.0A VDS= 5V IDS= 30mA Gate-Source Breakdown Voltage VGSO IGS= -25mA Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  8.0  V -2.0 -3.0 -5.0 V -10   °C/W  0.8 1.0  The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Syste...