TGM9398-25

FEATURES ･BROAD BAND 2-STAGE AMPLIFIER ･HIGH POWER Pout= 44.0dBm at Pin= 23.0dBm ･HIGH GAIN GL= 24dB(Typ) at Pin= 7dBm ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaN AMPLIFIER TGM9398-25 RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power Drain Current Power Added Efficiency Linear Gain IDD=IDD1+ IDD2 SYMBOL CONDITIONS Pout IDD* add VDD1,VDD2= 24V IDDset= 1.2A @Pin= 23.0dBm f = 9.3 to 9.8GHz GL @Pin= 7dBm UNIT dBm A % dB MIN. 43.0   20 TYP. MAX. 44.0  2.6 3.5 38  24  ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) CHARACTERISTICS SYMBOL Drain- Source Voltage VDD1, VDD2 Gate- Source Voltage VGG1,VGG2 Drain Current IDD1 IDD2 Flange Temperature Tf Input Power Pin Storage Temperature Tstg UNIT V V A A °C dBm °C RATING 50 -10 1.25 7.5 -40 to +90 +27 -65 to +175  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Rese...