GaN AMPLIFIER. TGM9398-25 Datasheet

TGM9398-25 AMPLIFIER. Datasheet pdf. Equivalent

Part TGM9398-25
Description MICROWAVE POWER GaN AMPLIFIER
Feature FEATURES ・BROAD BAND 2-STAGE AMPLIFIER ・HIGH POWER Pout= 44.0dBm at Pin= 23.0dBm ・HIGH GAIN GL= 24dB.
Manufacture Toshiba
Datasheet
Download TGM9398-25 Datasheet



TGM9398-25
FEATURES
BROAD BAND 2-STAGE AMPLIFIER
HIGH POWER
Pout= 44.0dBm at Pin= 23.0dBm
HIGH GAIN
GL= 24dB(Typ) at Pin= 7dBm
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaN AMPLIFIER
TGM9398-25
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power
Drain Current
Power Added Efficiency
Linear Gain
IDD=IDD1+ IDD2
SYMBOL
CONDITIONS
Pout
IDD*
add
VDD1,VDD2= 24V
IDDset= 1.2A
@Pin= 23.0dBm
f = 9.3 to 9.8GHz
GL
@Pin= 7dBm
UNIT
dBm
A
%
dB
MIN.
43.0
20
TYP. MAX.
44.0
2.6
3.5
38
24
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
Drain- Source Voltage
VDD1, VDD2
Gate- Source Voltage
VGG1,VGG2
Drain Current
IDD1
IDD2
Flange Temperature
Tf
Input Power
Pin
Storage Temperature
Tstg
UNIT
V
V
A
A
°C
dBm
°C
RATING
50
-10
1.25
7.5
-40 to +90
+27
-65 to +175
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20170919_No1312
Page: 1 / 7



TGM9398-25
PACKAGE OUTLINE (7-BA42B)
MICROWAVE POWER GaN AMPLIFIER
TGM9398-25
Unit in mm
VGG2
VDD1
RF Input
VGG1
VDD2
RF Output
GND (package)
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds
350°C. Flanges of devices should be attached using screws and washers. Recommended torque is 0.18-0.20 N·m.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20170919_No1312
Page: 2 / 7





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