GaN HEMT. TGI5867-50L Datasheet

TGI5867-50L HEMT. Datasheet pdf. Equivalent

Part TGI5867-50L
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout= .
Manufacture Toshiba
Datasheet
Download TGI5867-50L Datasheet



TGI5867-50L
MICROWAVE POWER GaN HEMT
TGI5867-50L
FEATURES
BROAD BAND INTERNALLY MATCHED HEMT
HIGH POWER
Pout= 47.0dBm at Pin= 39.0dBm
HIGH GAIN
GL= 13.5dB at 5.85GHz to 6.75GHz
LOW INTERMODULATION DISTORTION
IM3(Min.)= -40dBc at Po=32.0dBm
Single Carrier Level
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
Output Power
Drain Current
Power Added Efficiency
Pout
IDS1
add
VDS= 24V
IDSset= 3.0A
f= 5.85 to 6.75GHz
@Pin= 39dBm
Linear Gain
GL
@Pin= 20dBm
Gain flatness
G
3rd Order Intermodulation
Distortion
Drain Current
IM3
IDS2
Two-Tone Test
Po= 32.0dBm, f= 5MHz
(Single Carrier Level)
Channel Temperature Rise
Tch
(VDS X IDS + Pin Pout)
X Rth(c-c)
Recommended Gate Resistance(Rg): 60
UNIT
dBm
A
%
dB
dB
dBc
A
°C
MIN.
46.0
12.5
-40
TYP. MAX.
47.0
5.4
6.3
33
13.5
±0.8
3.5
4.5
130 150
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 5V
IDS= 5.0A
VDS= 5V
IDS= 23mA
VDS= 5V
VGS= 0V
Gate-Source Breakdown Voltage
VGSO IGS= -10mA
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
4.5
V
-2.6 -4.0 -6.0
A
15
V
-10
°C/W
1.4
1.6
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20170919_No1287
Page: 1 / 9



TGI5867-50L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI5867-50L
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
50
-10
15
140
250
-65 to +175
PACKAGE OUTLINE (7-AA04A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 2_20170919_No1287
Page: 2 / 9





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