TGI5867-50L

MICROWAVE POWER GaN HEMT TGI5867-50L FEATURES ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3(Min.)= -40dBc at Po=32.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS Output Power Drain Current Power Added Efficiency Pout IDS1 add VDS= 24V IDSset= 3.0A f= 5.85 to 6.75GHz @Pin= 39dBm Linear Gain GL @Pin= 20dBm Gain flatness G 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two-Tone Test Po= 32.0dBm, ∆f= 5MHz (Single Carrier Level) Channel Temperature Rise Tch (VDS X IDS + Pin – Pout) X Rth(c-c) Recommended Gate Resistance(Rg): 60  UNIT dBm A % dB dB dBc A °C MIN. 46.0   12.5  -40   TYP. MAX. 47.0  5.4 6.3 33  13.5   ±0.8   3.5 4.5 130 150 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 5V IDS= 5.0A VDS= 5V IDS= 23mA VDS= 5V VGS= 0V Gate-Source Breakdown Voltage VGSO IGS= -10mA Thermal Resistance Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  4.5  V -2.6 -4.0 -6.0 A  15  V -10   °C/W  1.4 1.6  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”...