GaN HEMT. TGI5059-120L Datasheet

TGI5059-120L HEMT. Datasheet pdf. Equivalent

Part TGI5059-120L
Description MICROWAVE POWER GaN HEMT
Feature MICROWAVE POWER GaN HEMT TGI5059-120L FEATURES ・BROAD BAND INTERNALLY MATCHED HEMT ・HIGH POWER Pout=.
Manufacture Toshiba
Datasheet
Download TGI5059-120L Datasheet



TGI5059-120L
MICROWAVE POWER GaN HEMT
TGI5059-120L
FEATURES
BROAD BAND INTERNALLY MATCHED HEMT
HIGH POWER
Pout= 51.0dBm at Pin= 42.0dBm
HIGH GAIN
GL= 13.5dB at Pin= 20.0dBm
LOW INTERMODULATION DISTORTION
IM3(Min.)= -25dBc at Pout= 44.0dBm
Single Carrier Level
HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
SYMBOL
CONDITIONS
UNIT
Output Power
Drain Current
Power Added Efficiency
Pout
IDS1
add
VDS= 24V
IDSset= 4.0A
f = 5.0 to 5.9GHz
@Pin= 42dBm
dBm
A
%
Linear Gain
Gain flatness
GL
dB
@Pin= 20dBm
G
dB
3rd Order Intermodulation
Distortion
Drain Current
IM3
IDS2
Two-Tone Test
dBc
@Po=44.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin Pout)
X Rth(c-c)
°C
Recommended Gate Resistance (Rg): 28
MIN.
50.0
12.5
-25
TYP. MAX.
51.0
11.0 12.0
40
13.5
±0.8
-27
8.0
120 140
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 5V
IDS= 10.0A
VDS= 5V
IDS= 46mA
VDS= 5V
VGS= 0V
VGSO IGS= -20mA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-2.6 -4.0 -6.0
A
28
V
-10
°C/W
0.6
0.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as TISS) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20170919_No1328
Page: 1 / 7



TGI5059-120L
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaN HEMT
TGI5059-120L
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
50
-10
18.0
280
250
-65 to +175
PACKAGE OUTLINE (7-AA06A)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 1_20170919_No1328
Page: 2 / 7





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