TIM7785-12UL

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 7.7GHz to 8.5GHz ･HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ･LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-12UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.6A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test Po= 30.5dBm, Δf= 5MHz dBc (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 68  MIN. 40.5 7.5    -44   TYP. MAX. 41.5  8.5  3.2 3.8  ±0.6 38  -47  2.6 3.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.0A VDS= 3V IDS= 40mA VDS= 3V VGS= 0V VGSO IGS= -140A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  2.5  V -1.0 -2.5 -4.0 A  7.2  V -5   °C/W  2.0 2.4  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATIO...