GaAs FET. TIM7785-8UL Datasheet

TIM7785-8UL FET. Datasheet pdf. Equivalent

Part TIM7785-8UL
Description MICROWAVE POWER GaAs FET
Feature FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 39.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN.
Manufacture Toshiba
Datasheet
Download TIM7785-8UL Datasheet



TIM7785-8UL
FEATURES
BROAD BAND INTERNALLY MATCHED FET
HIGH POWER
P1dB= 39.5dBm at 7.7GHz to 8.5GHz
HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz
HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-8UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS
Output Power at 1dB
Gain Compression Point
Power Gain at 1dB
Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB
IDS1
G
VDS= 10V
IDSset= 1.8A
f = 7.7 to 8.5GHz
UNIT
dBm
dB
A
dB
Power Added Efficiency
ηadd
%
3rd Order Intermodulation
Distortion
Drain Current
IM3
IDS2
Two Tone Test
dBc
Po= 28.5dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150
MIN.
38.5
7.5
-44
TYP. MAX.
39.5
8.5
2.2
2.6
±0.6
35
-47
2.2
2.6
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS
Transconductance
Pinch-off Voltage
Saturated Drain Current
Gate-Source Breakdown Voltage
Thermal Resistance
SYMBOL
gm
VGSoff
IDSS
CONDITIONS
VDS= 3V
IDS= 3.0A
VDS= 3V
IDS= 30mA
VDS= 3V
VGS= 0V
VGSO IGS= -100µA
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
1.8
V
-1.0 -2.5 -4.0
A
5.2
V
-5
°C/W
2.5
3.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by
TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for
any infringement of patents or any other intellectual property rights of third parties that may result from the use of
product. No license to any intellectual property right is granted by this document. The information contained herein is
subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment
incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170913_No1110
Page: 1 / 4



TIM7785-8UL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM7785-8UL
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25°C)
Channel Temperature
Storage Temperature
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
RATING
15
-5
7.0
42.9
175
-65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
Gate
Source
Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at
350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170913_No1110
Page: 2 / 4





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