MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN
G1dB= 8.0dB(Min.)...
Description
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 36.5dBm at 5.85GHz to 6.75GHz ・HIGH GAIN
G1dB= 8.0dB(Min.) at 5.85GHz to 6.75GHz ・HERMETICALLY SEALED PACKAGE ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 25.5dBm Single Carrier Level.
MICROWAVE POWER GaAs FET
TIM5964-4SL-422
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 1.1A f = 5.85 to 6.75GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 25.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 150
MIN. 35.5 8.0 -42
TYP. MAX.
36.5
1.1
1.3
±0.6
35
-45
1.1
1.3
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 1.5A
VDS= 3V IDS= 15mA
VDS= 3V VGS= 0V
VGSO IGS= -50A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
0.9
V
-1.0 -2.5 -4.0
A
2.6
V
-5
°C/W
4.5
6.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUT...
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