MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 10.0dB at 5.9...
Description
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 45.0dBm at 5.9GHz to 6.4GHz ・HIGH GAIN
G1dB= 10.0dB at 5.9GHz to 6.4GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM5964-30UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 6.4A f = 5.9 to 6.4GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 34.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 28
MIN. 44.0 9.0 -44
TYP. MAX.
45.0
10.0
7.0
8.0
0.6
41
-47
7.0
8.0
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 10.0A
VDS= 3V IDS= 80mA
VDS= 3V VGS= 0V
Gate-Source Breakdown Voltage Thermal Resistance
VGSO Rth(c-c)
IGS= -240A Channel to Case
UNIT MIN. TYP. MAX.
S
8.0
V
-0.5 -2.0 -3.0
A
16.0
V
-5
°C/W
1.0
1.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or a...
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