TIM5964-35SLA-422

MICROWAVE POWER GaAs FET TIM5964-35SLA-422 FEATURES ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 45.5dBm at 5.85GHz to 6.75GHz ŋHIGH GAIN G1dB= 8.0dB at 5.85GHz to 6.75GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 8.0A f= 5.85 to 6.75GHz UNIT dBm dB A dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add IM3 IDS2 Tch % Two-Tone Test Po= 35dBm, f= 5MHz dBc (Single Carrier Level) A (VDS  IDS  Pin  P1dB)  Rth(c-c) °C Recommended Gate Resistance(Rg): 28  MIN. 45.0 8.0    -42   TYP. MAX. 45.5    8.0 9.0  0.8 39  -45  8.0 9.0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) IGS= -420A Channel to Case UNIT MIN. TYP. MAX. S  6.5  V -1.0 -2.5 -4.0 A  20  V -5 °C/W    1.0 1.3  The information contained herein is presented as guidance for product use. No responsibility is assumed by Toshiba Infrastructure Systems & Solutions Corpora...