TIM1213-18L

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 42.5dBm at 12.7GHz to 13.2GHz ･HIGH GAIN G1dB= 6.0dB at 12.7GHz to 13.2GHz ･LOW INTERMODULATION DISTORTION IM3= -28dBc at Pout= 36.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM1213-18L RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 4.4A f = 12.7 to 13.2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 36.0dBm, f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 100  MIN. 42.0 5.0    -25   TYP. MAX. 42.5  6.0  5.5 6.0  ±0.8 28  -28  5.5 6.0  100 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 4.8A VDS= 3V IDS= 145mA VDS= 3V VGS= 0V VGSO IGS= -145A Rth(c-c) Channel to Case UNIT MIN. TYP. MAX. S  4.5  V -0.7 -2.0 -4.5 A  10.0  V -5   °C/W  1.8 2.3  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS ...