MICROWAVE POWER GaAs FET
MICROWAVE POWER GaAs FET
TIM1213-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 12.7GHz to...
Description
MICROWAVE POWER GaAs FET
TIM1213-30L
FEATURES
ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER
P1dB= 45.0dBm at 12.7GHz to 13.2GHz ŋHIGH GAIN
G1dB= 5.5dB at 12.7GHz to 13.2GHz ŋLOW INTERMODULATION DISTORTION
IM3= -28dBc at Pout= 33dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 7.0A f= 12.7 to 13.2GHz
UNIT dBm dB
A dB
Power Added Efficiency 3rd Order Intermodulation Distortion
Drain Current
Channel Temperature Rise
add IM3 IDS2 Tch
%
Two-Tone Test
dBc
Po= 38dBm, f= 5MHz
(Single Carrier Level)
A
(VDS IDS Pin P1dB)
Rth(c-c)
°C
Recommended Gate Resistance (Rg): 10
MIN. 44.0 4.5 -25
TYP. MAX.
45.0
5.5
10.0 11.0
0.8
23
-28
9.0 10.1
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 9.6A VDS= 3V IDS= 290mA VDS= 3V VGS= 0V
VGSO IGS= -290A
Thermal Resistance
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
5.5
V
-0.7 -2.0 -4.5
A
20.0
V
-5
°C/W
1.0
1.1
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORA...
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