MICROWAVE POWER GaAs FET
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz ・HIGH GAIN
G1dB= 7.0dB at 10...
Description
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.0dBm at 10.7GHz to 11.7GHz ・HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ・LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 30.0dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM1011-15L
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 9V IDSset= 4.0A f = 10.7 to 11.7GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 30.0dBm, f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 100
MIN. 41.0 6.0 -42
TYP. MAX.
42.0
7.0
4.5
5.5
±0.8
31
-45
4.5
5.5
100
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 4.8A
VDS= 3V IDS= 145mA
VDS= 3V VGS= 0V
VGSO IGS= -145A
Rth(c-c) Channel to Case
UNIT MIN. TYP. MAX.
S
3.0
V
-1.5 -3.0 -4.5
A
10.0 11.5
V
-5
°C/W
2.0
2.5
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS...
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