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TIM6472-60SL Dataheets PDF



Part Number TIM6472-60SL
Manufacturers Toshiba
Logo Toshiba
Description MICROWAVE POWER GaAs FET
Datasheet TIM6472-60SL DatasheetTIM6472-60SL Datasheet (PDF)

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 48.0dBm at 6.4GHz to 7.2GHz ・HIGH GAIN G1dB= 7.5dB at 6.4GHz to 7.2GHz ・LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 36.5dBm Single Carrier Level ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-60SL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS.

  TIM6472-60SL   TIM6472-60SL


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