M3004204

High Performance M1004204/M1008204/M1016204 Serial MRAM Memory M3004204/M3008204/M3016204 Description Mxxxx204 is a magneto-resistive random-access memory (MRAM). It is offered in density ranging from 4Mbit to 16Mbit. MRAM technology is analogous to Flash technology with SRAM compatible read/write timings (Persistent SRAM, P-SRAM). Data is always non-volatile with 1016 write cycles endurance and greater than 20-year retention @85°C. MRAM is a true random-access memory; allowing both reads and writes to occur randomly in memory. MRAM is ideal for applications that must store and retrieve data without incurring large latency penalties. It offers low latency, low power, infinite endurance and scalable non-volatile memory technology. Mxxxx204 is available in small footprint 8-pad DFN (WSON) and 8pin SOIC packages. These packages are compatible with similar low-power volatile and non-volatile products. Mxxxx204 is offered with industrial (-40°C to 85°C) and industrial plus (-40°C to 105°C) operating temperature ranges. Typical Applications Ideal for applications that must store and retrieve data without incurring large latency penalties. Factory Automation Multifunction Printers Industrial Control And Monitoring Medical Diagnostics Data Switches And Routers Block Diagram Features  Interface Serial Peripheral Interface QSPI (4-4-4) Single Data Rate Mode: 108MHz Double Data Rate Mode: 54MHz  Technology 40nm pMTJ STT-MRAM Data Endurance: 1016 write cycles ...