SiC FET. UF3SC120009K4S Datasheet

UF3SC120009K4S FET. Datasheet pdf. Equivalent

Part UF3SC120009K4S
Description SiC FET
Feature 1200V-8.6mW SiC FET DATASHEET UF3SC120009K4S CASE CASE D (1) Rev. B, December 2019 Description T.
Manufacture UnitedSiC
Datasheet
Download UF3SC120009K4S Datasheet



UF3SC120009K4S
1200V-8.6mW SiC FET
DATASHEET
UF3SC120009K4S
CASE
CASE
D (1)
Rev. B, December 2019
Description
This SiC FET device is based on a unique ‘cascode’ circuit
configuration, in which a normally-on SiC JFET is co-packaged with a Si
MOSFET to produce a normally-off SiC FET device. The device’s
standard gate-drive characteristics allows for a true “drop-in
replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction
devices. Available in the TO-247-4L package, this device exhibits ultra-
low gate charge and exceptional reverse recovery characteristics,
making it ideal for switching inductive loads , and any application
requiring standard gate drive.
Features
1 2 34
G (4)
KS (3)
S (2)
w Typical on-resistance RDS(on),typ of 8.6mW
w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
w TO-247-4L package for faster switching, clean gate waveforms
Typical applications
Part Number
UF3SC120009K4S
Package
TO-247-4L
Marking
UF3SC120009K4S
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Datasheet: UF3SC120009K4S
Rev. B, December 2019
1



UF3SC120009K4S
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
1. Limited by bondwires
2. Pulse width tp limited by TJ,max
3. Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS
Ptot
TJ,max
TJ, TSTG
Test Conditions
DC
TC < 110°C
TC = 25°C
L=15mH, IAS =8.6A
TC = 25°C
Value
1200
-20 to +20
120
550
555
789
175
-55 to 175
Units
V
V
A
A
mJ
W
°C
°C
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Symbol
RqJC
Test Conditions
Value
Units
Min
Typ
Max
0.15
0.19
°C/W
Datasheet: UF3SC120009K4S
Rev. B, December 2019
2





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