Power Amplifier. CMPA1D1E080F Datasheet

CMPA1D1E080F Amplifier. Datasheet pdf. Equivalent

Part CMPA1D1E080F
Description Power Amplifier
Feature CMPA1D1E080F 80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier Cree’s CMPA1D1E080F is a Ga.
Manufacture CREE
Datasheet
Download CMPA1D1E080F Datasheet



CMPA1D1E080F
CMPA1D1E080F
80 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN, Power Amplifier
Cree’s CMPA1D1E080F is a Gallium Nitride (GaN) High Electron Mobility
Transistor (HEMT) based Monolithic Microwave Integrated Circuit (MMIC).
It is designed specifically for high efficiency, high gain, and wide bandwidth
capabilities while meeting OQPSK linearity, which makes CMPA1D1E080F
ideal for 13.75 - 14.5 GHz commercial Ku Band satellite communications
applications. The transistor is supplied in a 14 lead metal/ceramic flange
package.
PaPcNka:gCeMTPyAp1eD:414E0028202F
Typical Performance Over 13.75 - 14.5 GHz (TC = 25˚C)
Parameter
13.75 GHz 14 GHz 14.25 GHz 14.5 GHz
Units
Small Signal Gain
28.8
28.3
29
28.6
dB
ACLR1
-29.3
-29.5
-27.3
-24.5
dBc
Power Gain1
25.3
24
24.7
22.4
dB
Power Added Efficiency1
18.3
17.3
18.2
18.5
%
Note1: Measured at PAVE = 46 dBm in the CMPA1D1E080F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
Features
28 dB Small Signal Gain
80 W CW Power
500 MHz Video Bandwidth
40 W Linear Power Under OQPSK
Applications
Satellite Communications Uplink
Subject to change without notice.
www.cree.com/rf
1



CMPA1D1E080F
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature1
Screw Torque
VDSS
VGS
TSTG
TJ
IGMAX
TS
τ
84
-10, +2
-55, +150
225
49
245
40
VDC
VDC
˚C
˚C
mA
˚C
in-oz
25˚C
25˚C
25˚C
Thermal Resistance, Junction to Case
RθJC
0.57
˚C/W
PDISS = 246 W, 60˚C, CW
Case Operating Temperature
TC
-40, +60
˚C
Note:
1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; TC = 25˚C)
Characteristics
DC Characteristics1
Symbol
Min.
Typ.
Max.
Gate Threshold
VGS(TH)
-3.8
-3.0
-2.3
Gate Quiscent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
VQ
-2.7
IDS
36.9
44.3
VBD
84
100
RF Characteristics3, 4, 5, 6
Small Signal Gain
Input Return Loss
Output Return Loss
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Added Efficiency
Power Gain
Power Gain
Power Gain
Power Gain
OQPSK Linearity
OQPSK Linearity
OQPSK Linearity
OQPSK Linearity
S21
S11
S22
PAE1
PAE2
PAE3
PAE4
GP1
GP2
GP3
GP4
ACLR1
ACLR2
ACLR3
ACLR4
-
28.7
-8.7
-
-10.2
18.3
17.3
18.2
18.5
25.3
24
24.7
22.4
-29.3
-29.5
-27.3
-24.5
Output Mismatch Stress
VSWR
3:1
Notes:
1 Measured on-wafer prior to packaging.
2 Scaled from PCM data.
3 Measured in the CMPA1D1E080F-AMP
4 Under OQPSK modulated signal, 1.6 Msps, PN23, Alpha Filter = 0.2
5 Measured at PAVE = 46 dBm
6 Fixture loss de-embedded
Units Conditions
V
VDS = 10 V, ID = 49.2 mA
V
VDS = 40 V, ID = 640 mA
A
VDS = 6.0 V, VGS = 2.0 V
V
VGS = -8 V, ID = 49.2 mA
dB
VDD = 40 V, IDQ = 640 mA, PIN = -30 dBm
dB
VDD = 40 V, IDQ = 640 mA, PIN = -30 dBm
dB
VDD = 40 V, IDQ = 640 mA, PIN = -30 dBm
%
VDD = 40 V, IDQ = 640 mA, Frequency = 13.75 GHz
%
VDD = 40 V, IDQ = 640 mA, Frequency = 14 GHz
%
VDD = 40 V, IDQ = 640 mA, Frequency = 14.25 GHz
%
VDD = 40 V, IDQ = 640 mA, Frequency = 14.5 GHz
dB
VDD = 40 V, IDQ = 640 mA, Frequency = 13.75 GHz
dB
VDD = 40 V, IDQ = 640 mA, Frequency = 14 GHz
dB
VDD = 40 V, IDQ = 640 mA, Frequency = 14.25 GHz
dB
VDD = 40 V, IDQ = 640 mA, Frequency = 14.5 GHz
dBc
VDD = 40 V, IDQ = 640 mA, Frequency = 13.75 GHz
dBc
VDD = 40 V, IDQ = 640 mA, Frequency = 14 GHz
dBc
VDD = 40 V, IDQ = 640 mA, Frequency = 14.25 GHz
dBc
VDD = 40 V, IDQ = 640 mA, Frequency = 14.5 GHz
Y
No damage at all phase angles, VDD = 40 V, IDQ =
640 mA, POUT = 46 dBm OQPSK
Copyright © 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the
Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective
owners and do not imply specific product and/or vendor endorsement, sponsorship or association.
2
CMPA1D1E080F Rev 0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Fax: +1.919.869.2733
www.cree.com/RF





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