P-Channel MOSFET. MCU12P06 Datasheet

MCU12P06 MOSFET. Datasheet pdf. Equivalent

Part MCU12P06
Description P-Channel MOSFET
Feature MCU12P06 Features • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Orde.
Manufacture MCC
Datasheet
Download MCU12P06 Datasheet



MCU12P06
MCU12P06
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
P-Channel MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +150°C
• Storage Temperature Range: -55°C to +150°C
• Thermal Resistance: 3.13°C/W Junction to Case
Parameter
Symbol Rating Unit
Drain-Source Voltage
Gate-Source Volltage
Continuous Drain Current(Note 1)
Pulsed Drain Current (Note 2)
Total Power Dissipation
VDS
-60
V
VGS
±20
V
ID
-12
A
IDM
-30
A
PD
40
W
Notes: 1.Surface Mounted on FR4 Board Using the Minimum Recommended Pad Size.
2. Pulse Test : Pulse Width300μs, Duty Cycle 2%.
Internal Structure:
D
G
S
DPAK(TO-252)
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
L
Q
A
B
D
1. Gate
2,4. Drain
3. Source
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G
0.190
4.83
H 0.236 0.244 6.00 6.20
I 0.086 0.094 2.18 2.39
J 0.386 0.409 9.80 10.40
K
0.114
2.90
L 0.055 0.067 1.40 1.70
M
0.063
1.60
O 0.043 0.051 1.10 1.30
Q 0.000 0.012 0.00 0.30
V
0.211
5.35
NOTE
TYP.
TYP.
TYP.
TYP.
Rev.3-1-06182019
1/4
MCCSEMI.COM



MCU12P06
MCU12P06
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min
Static Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V, ID=-250µA
-60
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
IDSS
VDS=-60V, VGS=0V
Gate-Threshold Voltage(Note 2)
VGS(th) VDS=VGS, ID=-250µA
-1
Drain-Source On-Resistance(Note 2)
RDS(on)
VGS=-10V, ID=-3.1A
VGS=-4.5V, ID=-0.2A
Diode Forward Voltage
VSD VGS=0V, IS=-2A
Forward Tranconductance(Note2)
gFS
VDS=-15V, ID=-3.1A
Dynamic Characteristics(Note 3)
Input Capacitance
Ciss
Output Capacitance
Coss VDS=-15V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Gate Resistance
Rg
f=1MHz
Swithing Characteristics(Note 3,4)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDD=-30V,VGS=-4.5V,ID=-3.1A
VDD =-30V, VGEN=-4.5V, ID=-2.4A
RL=12.5Ω, RG=1Ω
Note 3. Switching Characteristics are Independent of Operating Junction Temperature.
4. Guaranteed by Design, Not Subject to Production Testing.
Typ
-1.5
60
92
8.5
650
95
60
2.2
3.7
Max Unit
V
±100
nA
-1
µA
-3
V
80
100
1.2
V
S
pF
20
Ω
12
nC
45
105
ns
60
45
Rev.3-1-06182019
2/4
MCCSEMI.COM





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