N-Channel MOSFET. MCU80N03A Datasheet

MCU80N03A MOSFET. Datasheet pdf. Equivalent

Part MCU80N03A
Description N-Channel MOSFET
Feature MCU80N03A Features • Trench Power LV MOSFET Technology • Excellent Package for Heat Dissipation • H.
Manufacture MCC
Datasheet
Download MCU80N03A Datasheet



MCU80N03A
MCU80N03A
Features
• Trench Power LV MOSFET Technology
• Excellent Package for Heat Dissipation
• High Density Cell Design for Low RDS(on)
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
N-CHANNEL
MOSFET
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +175°C
• Storage Temperature Range: -55°C to +175°C
• Thermal Resistance: 3.3°C/W Junction to Case(Note 1)
Parameter
Symbol Rating Unit
Drain-Source Voltage
Gate-Source Volltage
VDS
30
V
VGS
±20
V
TC=25°C
Continuous Drain Current
ID
TC=100°C
Pulsed Drain Current (Note 2)
IDM
Single Pulse Avalanche Energy(Note 3)
EAS
80
A
56
A
190
A
230
mJ
TC=25°C
Total Power Dissipation
PD
45
W
TC=100°C
22.5
W
Note:
1.RθJA is the Sum of the Junction-to-Case and Case-to-Ambient Thermal Resistance,
Where the Case Thermal Reference is Defined as the Solder Mounting Surface of the
Drain Pins. RθJC is Guaranteed by Design, While RθJA is Determined by the Board Design.
The Maximum Rating Presented Here is Based on Mounting on a 1 in2 Pad of 2oz Copper.
2.Pulse Test: Pulse Width300µs,Duty Cycle 2%.
3.TJ=25°C, VDS=30V, VDD=25V, VGS=10V, L=1mH.
Internal Structure
D
G
DPAK(TO-252)
J
H
C
1
O
2
4 FE
I
3
M
K
V
G
L
Q
A
B
D
1. Gate
2,4. Drain
3. Source
DIMENSIONS
DIM
INCHES
MM
MIN MAX MIN MAX
A 0.087 0.094 2.20 2.40
B 0.000 0.005 0.00 0.13
C 0.026 0.034 0.66 0.86
D 0.018 0.023 0.46 0.58
E 0.256 0.264 6.50 6.70
F 0.201 0.215 5.10 5.46
G
0.190
4.83
H 0.236 0.244 6.00 6.20
I 0.086 0.094 2.18 2.39
J 0.386 0.409 9.80 10.40
K
0.114
2.90
L 0.055 0.067 1.40 1.70
M
0.063
1.60
O 0.043 0.051 1.10 1.30
Q 0.000 0.012 0.00 0.30
V
0.211
5.35
NOTE
TYP.
TYP.
TYP.
TYP.
S
Rev.3-1-06192019
1/4
MCCSEMI.COM



MCU80N03A
MCU80N03A
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate-Source Leakage Current
Zero Gate Voltage Drain Current
Gate-Threshold Voltage
Drain-Source On-Resistance
Diode Forward Voltage
Continuous Body Diode Current
Dynamic Characteristics
V(BR)DSS VGS=0V, ID=250µA
IGSS VDS=0V, VGS =±20V
IDSS
VDS=30V, VGS=0V
VGS(th) VDS=VGS, ID=250µA
RDS(on)
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VSD VGS=0V, IS=20A
IS
30
V
±100
nA
1
µA
1
1.5
2.5
V
4.2
5.5
5.7
8
1.2
V
80
A
Input Capacitance
Ciss
2150
Output Capacitance
Coss VDS=15V,VGS=0V,f=1MHz
435
pF
Reverse Transfer Capacitance
Crss
252
Total Gate Charge
Qg
52.8
Gate-Source Charge
Qgs VDS=15V,VGS=10V,ID=20A
12.3
nC
Gate-Drain Charge
Qgd
10.8
Turn-On Delay Time
td(on)
9
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VGS=10V,VDD=20V, ID=2A,RL=1Ω
RGEN=3Ω
15.5
29
ns
Turn-Off Fall Time
tf
9
Reverse Recovery Time
Reverse Recovery Charge
tRR
IF=20A, di/dt=100A/μs
QRR
27
ns
28
nC
Rev.3-1-06192019
2/4
MCCSEMI.COM





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