N-Channel MOSFET. MCB85N06Y Datasheet

MCB85N06Y MOSFET. Datasheet pdf. Equivalent

Part MCB85N06Y
Description N-Channel MOSFET
Feature MCB85N06Y Features • Fast Switching • Improved dv/dt Capability • Epoxy Meets UL 94 V-0 Flammabilit.
Manufacture MCC
Datasheet
Download MCB85N06Y Datasheet



MCB85N06Y
MCB85N06Y
Features
• Fast Switching
• Improved dv/dt Capability
• Epoxy Meets UL 94 V-0 Flammability Rating
• Moisture Sensitivity Level 1
• Halogen Free Available Upon Request By Adding Suffix "-HF"
• Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Maximum Ratings
• Operating Junction Temperature Range : -55°C to +175°C
• Storage Temperature Range: -55°C to +175°C
• Thermal Resistance: 1.76°C/W Junction to Case(Note 1)
Parameter
Symbol Rating Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Volltage
VGS
±20
V
TC=25°C
Continuous Drain Current
ID
TC=100°C
85
A
59
A
Pulsed Drain Current
IDM
Single Pulse Avalanche Energy (Note 2)
EAS
150
A
290
mJ
Total Power Dissipation
PD
85
W
Note: 1.Surface Mounted on FR4 Board, t10 sec.
2.EAS Condition: TJ=25°C,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω.
Internal Structure
D
G
S
1.GATE
2.DRAIN
3.SOURCE
4.DRAIN
N-CHANNEL
MOSFET
D2-PAK
S
A
V
1
G
2
4
B
3
D
H
w
J
K
E
DIMENSIONS
DIM
INCHES
MIN MAX
MM
MIN MAX
A 0.320 0.359 8.13 9.14
B 0.380 0.411 9.65 10.45
C 0.160 0.190 4.06 4.83
D 0.020 0.035 0.51 0.89
E 0.045 0.055 1.14 1.40
G 0.0 0.105 2. 2.67
H 0.096 0.134 2.43 3.40
J 0.014 0.021 0.35 0.53
K 0.090 0.131 2.29 3.32
S 0.575 0.625 14.22 16.22
V 0.045 0.055 1.14 1.40
W 0.000 0.006 0.00 0.15
C
NOTE
Suggested Solder Pad Layout
.420
10.66
.330
8.38
.740
18.79
Inches
mm
.065
1.65
.070
1.78
.120
3.05
Rev.3-1-06132019
1/4
MCCSEMI.COM



MCB85N06Y
MCB85N06Y
Electrical Characteristics @ 25°C (Unless Otherwise Specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250µA
Gate-Source Leakage Current
IGSS VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current
IDSS
VDS=60V, VGS=0V
Gate-Threshold Voltage(Note 3)
Drain-Source On-Resistance(Note 3)
VGS(th)
RDS(on)
VDS=VGS, ID=250µA
VGS=10V, ID=30A
Forward Tranconductance(Note 3)
gFS VDS=10V, ID=5.5A
Dynamic Characteristics(Note 4)
60
V
±100
nA
1
µA
1
1.6
2.4
V
11.3
13
30
S
Input Capacitance
Ciss
Output Capacitance
Coss VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS=30V,VGS=10V,ID=30A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=30V,ID=2A,RL=1Ω
VGS=10V,RGEN=3Ω
Turn-Off Fall Time
tf
Drain-Source Body Diode Characteristics
2498
185
pF
80
36
9.6
nC
6.6
12
5.2
ns
38
27
Continuous Body Diode Current
IS
85
A
Body Diode Voltage(Note 3)
VSD IS=20A, VGS=0V
1.4
V
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ=25°C, IF=30A,
Qrr
di/dt=100A/μs(Note 3)
280
ns
2.8
µC
Forward Turn-On Time
ton Intrinsic Turn-On Time is Negligible (Turn-On is Dominated by LS+LD)
Note 3. Pulse Test : Pulse Width300μs, Duty Cycle 1%.
4. Guaranteed by Design, Not Subject to Production Testing.
Rev.3-1-06132019
2/4
MCCSEMI.COM





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