Rectifier Diode. DZ435N Datasheet

DZ435N Diode. Datasheet pdf. Equivalent

Part DZ435N
Description Rectifier Diode
Feature Netz-Dioden-Modul Rectifier Diode Module Datenblatt / Data sheet DZ435N Kenndaten Key PEaralemekt.
Manufacture Infineon
Datasheet
Download DZ435N Datasheet



DZ435N
Netz-Dioden-Modul
Rectifier Diode Module
Datenblatt / Data sheet
DZ435N
Kenndaten
Key PEaralemektetrrsische Eigenschaften
VDRM / VRRM
3600 - 4000 V
IFAVM Thermisch43e5 A (TC=100°C)
IFSM
31547500A0 A(TC=55°C)
vT0
0,84 V
rT
0,6 mΩ
RthJC
0,078 K/W
Baseplate
70 mm
Weight
900 g
For type designation please refer to actual
shortform catalog
http://www.ifbip.com/catalog
Merkmale
Druckkontakt- Technologie für hohe
Verlässlichkeit
Industrie-Standard-Gehäuse
Elektrisch isolierte Grundplatte
Advanced medium power technology
Features
Pressure contact technology for high reliability
Industial standard package
Electrically insulated baseplate
Advanced medium power technology
Typische Anwendungen
Gleichrichter für Antriebsapplikationen
Gleichricher für UPS
Batterieladegleichrichter
Typical Applications
Rectifier for Drives Applications
Rectifiers for UPS
Battery chargers
content of customer DMX code DMX code DMX code
digit digit quantity
serial number
1..7
7
SP material number
8..16
9
datecode (production day)
17..18
2
datecode (production year)
19..20
2
datecode (production month) 21..22
2
vT class
23..26
4
QR class
27..30
4
Date of Publication 2017-01-24
Revision 3.2
www.ifbip.com
support@infineon-bip.com
Seite/page
1/11



DZ435N
Datenblatt / Data sheet
Netz-Dioden-Modul
Rectifier Diode Module
DZ435N
aften Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltages
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
DZ435N36K
DZ435N40K
Tvj = -40°C... Tvj max
Tvj = +25°C... Tvj max
TC = 100°C
TC = 47°C
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
Tvj = 25 °C, tP = 10 ms
Tvj = Tvj max, tP = 10 ms
VRRM
VRSM
IFRMSM
IFAVM
IFSM
I²t
3600
4000 V
3700
4100 V
1100 A
435 A
700 A
14.500 A
12.000 A
1.050.000 A²s
720.000 A²s
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Sperrstrom
reverse current
Isolations-Prüfspannung
insulation test voltage
Tvj = Tvj max , iF = 1200 A
Tvj = Tvj max
Tvj = Tvj max
Tvj = Tvj max , vR = VRRM
RMS, f = 50 Hz, t = 1 sec
RMS, f = 50 Hz, t = 1 min
vF
V(TO)
rT
iR
VISOL
max. 1,71 V
0,84 V
0,6 mΩ
max.
50 mA
3,6 kV
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Modul / per Module, Θ = 180° sin RthJC
pro Modul / per Module, DC
max. 0,0780 °C/W
max. 0,0745 °C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
pro Modul / per Module
prepared by: A.G
approved by: M.S
date of publication: 2017-01-24
revision:
3.2
RthCH
Tvj max
Tc op
Tstg
max. 0,02 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
Date of Publication 2017-01-24
Revision 3.2
Seite/page
2/11





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)