SILICON BRIDGE RECTIFIER
www.eicsemi.com
D5SBA10 ~ D5SBA60
SILICON BRIDGE RECTIFIERS
PRV : 100 ~ 600 Volts
Io : 6 Amperes
FEATURES :
* High cur...
Description
www.eicsemi.com
D5SBA10 ~ D5SBA60
SILICON BRIDGE RECTIFIERS
PRV : 100 ~ 600 Volts
Io : 6 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Very good heat dissipation * Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant * Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 7.7 grams
RBV25
C3
1.193 (30.3)
1.169 (29.7)
0.150 (3.8) 0.134 (3.4)
0.189 (4.8) 0.173 (4.4)
∅ 3.25 ± 0.15
20 ± 0.3
+ ~~
11 ± 0.2 17.5 ± 0.5
13.5 ± 0.3
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2±0.2
0.112 (2.85) 0.092 (2.35)
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 UNIT
Maximum Reverse Voltage Maximum Average Forward Current (50Hz Sine wave, R-load) Maximum Peak Forward Surge Current, Tj = 25°C (50Hz sine wave, Non-repetitive 1 cycle peak value) Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C Maximum Forward Voltage per Diode at IF = 3.0 A Maximum DC Reverse Current, VR=VRM ( Pulse measurement, Rating of per diode) Maximum Thermal Resistance, Junction to case Maximum Thermal Resistance, Junction to Ambient Operating Junction T...
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