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BT152-600R

WeEn

SCR

BT152-600R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifi...


WeEn

BT152-600R

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Description
BT152-600R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT78 (TO-220AB) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits High thermal cycling performance High voltage capability Planar passivated for voltage ruggedness and reliability Very high current surge capability 3. Applications Ignition circuits Motor control Protection circuits e.g. SMPS inrush current Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tmb ≤ 103 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current Dynamic characteristics VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 Min Typ Max Unit - - 600 V - - 13 A - - 20 A - - 200 A - - 220 A - - 125 °C - 3 32 mA 200 300 - V/µs WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol De...




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