Dual rugged ultrafast rectifier diode
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
Rev.05 - 7 March 2018
Product data sheet
1. General de...
Description
BYV32E-100
Dual rugged ultrafast rectifier diode, 20 A, 100 V
Rev.05 - 7 March 2018
Product data sheet
1. General description
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
High reverse voltage surge capability High thermal cycling performance Low thermal resistance Very low on-state loss Soft recovery characteristic minimizes power consuming oscillations
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VRRM
repetitive peak reverse voltage
IO(AV)
average output current
IRRM
repetitive peak reverse
current
VESD
electrostatic discharge
voltage
IFRM
repetitive peak forward
current
IFSM
non-repetitive peak
forward current
Symbol Parameter
Static characteristics
VF
forward voltage
Dynamic characteristics
Conditions
δ = 0.5; square-wave pulse; Tmb ≤ 115 °C; both diodes conducting; Fig. 1; Fig. 2 δ = 0.001; tp = 2 μs;
HBM; C = 250 pF; R = 1.5 kΩ; all pins
δ = 0.5; tp = 25 μs; Tmb ≤ 115 °C; per diode tp = 10 ms; sine-wave pulse; Tj(init) = 25 °C; per diode tp = 8.3 ms; sine-wave pulse; Tj(init) = 25 °C; per diode Conditions
IF = 8 A; Tj = 150 °C; Fig. 4
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs;
Tj = 25 °C; ramp recovery; Fig. 5
IF = 0.5 A to IR = 1 A; Tj = 25 °C; measured at IR= 0.25 A; step recovery; Fig. 6
Values
Unit
100
V
...
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