SILICON RECTIFIER DIODE
www.eicsemi.com
1SR139-100 ~ 1SR139-600
SILICON RECTIFIER DIODES
M1A
PRV : 100 - 600 Volts
Io : 1.0 Ampere
FEATURES ...
Description
www.eicsemi.com
1SR139-100 ~ 1SR139-600
SILICON RECTIFIER DIODES
M1A
PRV : 100 - 600 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated junction chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free
0.085(2.16) 0.075(1.91)
0.024(0.60) 0.022(0.55)
1.00 (25.4) MIN.
0.138(3.51) 0.122(3.10)
1.00 (25.4) MIN.
MECHANICAL DATA :
* Case : M1A Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.dSingle phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A Maximum DC Reverse Current at VR = VRRM Junction Temperature Range Storage Temperature Range
SYMBOL 1SR139-100 1SR139-200 1SR139-400 1SR139-600 UNIT
VRRM
100
200
400
600
V
VRMS
70
140
280
420
V
VDC
100
200
400
600
V
IF(AV)
1.0
A
IFSM
VF IRM TJ TSTG
40...
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