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1SR139-400

EIC

SILICON RECTIFIER DIODE

www.eicsemi.com 1SR139-100 ~ 1SR139-600 SILICON RECTIFIER DIODES M1A PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES ...


EIC

1SR139-400

File Download Download 1SR139-400 Datasheet


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www.eicsemi.com 1SR139-100 ~ 1SR139-600 SILICON RECTIFIER DIODES M1A PRV : 100 - 600 Volts Io : 1.0 Ampere FEATURES : * Glass passivated junction chip * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free 0.085(2.16) 0.075(1.91) 0.024(0.60) 0.022(0.55) 1.00 (25.4) MIN. 0.138(3.51) 0.122(3.10) 1.00 (25.4) MIN. MECHANICAL DATA : * Case : M1A Molded plastic * Epoxy : UL94V-0 rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.20 gram (approximately) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie.dSingle phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Maximum Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at I F = 1.0 A Maximum DC Reverse Current at VR = VRRM Junction Temperature Range Storage Temperature Range SYMBOL 1SR139-100 1SR139-200 1SR139-400 1SR139-600 UNIT VRRM 100 200 400 600 V VRMS 70 140 280 420 V VDC 100 200 400 600 V IF(AV) 1.0 A IFSM VF IRM TJ TSTG 40...




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