Document
BT149D
SCR
21 August 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
2. Features and benefits
• Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power drivers and logic ICs • A-G-K reverse pin-out
3. Applications
• General purpose switching and phase control • Low power circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 268 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12
Min Typ Max Unit
-
-
400 V
-
-
0.5 A
-
-
0.8 A
-
-
8
A
-
-
9
A
-
-
125 °C
-
50
200 µA
500 800 -
V/µs
WeEn Semiconductors
BT149D
SCR
Symbol
Parameter
Conditions
VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12
Min Typ Max Unit
-
25
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
G
gate
3
A
anode
Simplified outline
321
TO-92 (SOT54)
Graphic symbol
A
K
G sym037
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT149D
TO-92
Description plastic single-ended leaded (through hole) package; 3 leads
Version SOT54
BT149D
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 August 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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WeEn Semiconductors
BT149D
SCR
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
VRRM
repetitive peak reverse voltage
IT(AV) IT(RMS) ITSM
average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1
RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3
non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms;
state current
Fig. 4; Fig. 5
I2t dIT/dt
I2t for fusing
rate of rise of on-state current
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms tp = 10 ms; SIN IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs
IGM VRGM
peak gate current
peak reverse gate voltage
PGM PG(AV) Tstg Tj
peak gate power average gate power storage temperature junction temperature
over any 20 ms period
Min Max Unit
-
400 V
-
400 V
-
0.5 A
-
0.8 A
-
8
A
-
9
A
-
0.32 A²s
-
50
A/µs
-
1
A
-
5
V
-
2
W
-
0.1 W
-40 150 °C
-
125 °C
0.8
Ptot (W)
0.6
1.9 2.2
001aab446 77
a = 1.57
Tlead(max) (°C)
89
0.4 0.2
0 0
2.8 4
0.1
0.2
0.3
conduction angle
(degrees)
30 60 90 120 180
form factor
a
4 2.8 2.2 1.9 1.57
0.4
0.5
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Fig. 1. Total power dissipation as a function of average on-state current; maximum values
α IT(AV) (A)
101
113
125 0.6
BT149D
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 August 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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WeEn Semiconductors
BT149D
SCR
2 IT(RMS)
(A) 1.5
1
0.5
001aab449
1 IT(RMS)
(A) 0.8
0.6
0.4
0.2
001aab450 83 °C
0
10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Tlead = 83 °C
Fig. 2. RMS on-state current as a function of surge duration for sinusoidal currents
10
ITSM (A)
8
0
-50
0
50
100
150
Tlead (°C)
Fig. 3. RMS on-state current as a function of lead temperature; maximum values
001aab499
6
4
IT
ITSM
2
0
1
10
f = 50 Hz
tp
t
Tj(init) = 25 °C max
102
103
number of cycles
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
BT149D
Product data sheet
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21 August 2018
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WeEn Semiconductors
103 ITSM (A)
102
10
BT149D
SCR
001aab497
IT
ITSM
tp
t
Tj(init) = 25 °C max
1 10-5
10-4
10-3
10-2
tp (s)
tp ≤ 10 ms
Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT149D
Product data sheet
All information provided in this document is subject to legal disclaimers.
21 August 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights.