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BT149D Dataheets PDF



Part Number BT149D
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet BT149D DatasheetBT149D Datasheet (PDF)

BT149D SCR 21 August 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power drivers and logic ICs • A-G-K reverse pin-out 3. Applications • General purpose switchin.

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BT149D SCR 21 August 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power drivers and logic ICs • A-G-K reverse pin-out 3. Applications • General purpose switching and phase control • Low power circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IT(AV) average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 IT(RMS) RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3 ITSM non-repetitive peak on- half sine wave; Tj(init) = 25 °C; state current tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 10 mA; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 268 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12 Min Typ Max Unit - - 400 V - - 0.5 A - - 0.8 A - - 8 A - - 9 A - - 125 °C - 50 200 µA 500 800 - V/µs WeEn Semiconductors BT149D SCR Symbol Parameter Conditions VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 12 Min Typ Max Unit - 25 - V/µs 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 G gate 3 A anode Simplified outline 321 TO-92 (SOT54) Graphic symbol A K G sym037 6. Ordering information Table 3. Ordering information Type number Package Name BT149D TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 BT149D Product data sheet All information provided in this document is subject to legal disclaimers. 21 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 WeEn Semiconductors BT149D SCR 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage VRRM repetitive peak reverse voltage IT(AV) IT(RMS) ITSM average on-state current half sine wave; Tlead ≤ 83 °C; Fig. 1 RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3 non-repetitive peak on- half sine wave; Tj(init) = 25 °C; tp = 10 ms; state current Fig. 4; Fig. 5 I2t dIT/dt I2t for fusing rate of rise of on-state current half sine wave; Tj(init) = 25 °C; tp = 8.3 ms tp = 10 ms; SIN IT = 2 A; IG = 10 mA; dIG/dt = 100 mA/µs IGM VRGM peak gate current peak reverse gate voltage PGM PG(AV) Tstg Tj peak gate power average gate power storage temperature junction temperature over any 20 ms period Min Max Unit - 400 V - 400 V - 0.5 A - 0.8 A - 8 A - 9 A - 0.32 A²s - 50 A/µs - 1 A - 5 V - 2 W - 0.1 W -40 150 °C - 125 °C 0.8 Ptot (W) 0.6 1.9 2.2 001aab446 77 a = 1.57 Tlead(max) (°C) 89 0.4 0.2 0 0 2.8 4 0.1 0.2 0.3 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 0.4 0.5 α = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 1. Total power dissipation as a function of average on-state current; maximum values α IT(AV) (A) 101 113 125 0.6 BT149D Product data sheet All information provided in this document is subject to legal disclaimers. 21 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 WeEn Semiconductors BT149D SCR 2 IT(RMS) (A) 1.5 1 0.5 001aab449 1 IT(RMS) (A) 0.8 0.6 0.4 0.2 001aab450 83 °C 0 10-2 10-1 1 10 surge duration (s) f = 50 Hz; Tlead = 83 °C Fig. 2. RMS on-state current as a function of surge duration for sinusoidal currents 10 ITSM (A) 8 0 -50 0 50 100 150 Tlead (°C) Fig. 3. RMS on-state current as a function of lead temperature; maximum values 001aab499 6 4 IT ITSM 2 0 1 10 f = 50 Hz tp t Tj(init) = 25 °C max 102 103 number of cycles Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT149D Product data sheet All information provided in this document is subject to legal disclaimers. 21 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 WeEn Semiconductors 103 ITSM (A) 102 10 BT149D SCR 001aab497 IT ITSM tp t Tj(init) = 25 °C max 1 10-5 10-4 10-3 10-2 tp (s) tp ≤ 10 ms Fig. 5. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values BT149D Product data sheet All information provided in this document is subject to legal disclaimers. 21 August 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights.


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