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BUJ100LR

WeEn

NPN transistor

BUJ100LR NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, plana...


WeEn

BUJ100LR

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Description
BUJ100LR NPN power transistor 3 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High voltage capability Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Electronic lighting ballasts Inverters Off-line self-oscillating power supplies 4. Pinning information Table 1. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter Simplified outline 321 TO-92 (SOT54) Graphic symbol C B E sym123 5. Ordering information Table 2. Ordering information Type number Package Name BUJ100LR TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 WeEn Semiconductors 6. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCESM collector-emitter peak voltage VBE = 0 V VCBO VCEO VEBO IC ICM IB IBM Ptot Tstg Tj collector-base voltage collector-emitter voltage emitter-base voltage collector current peak collector current base current peak base current total power dissipation storage temperature junction temperature IE = 0 A IB = 0 A IC = 0 A; I(Emitter) = 10 mA DC; Fig. 1 DC Tlead ≤ 25 °C; Fig. 2 102 IC (A) 10 IC(max) 1 10- 1 10- 2 (1) 10- 3 1 10 102 Fig. 1. Forward bias safe operating area BUJ100LR NPN pow...




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