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BYV25F-600 Dataheets PDF



Part Number BYV25F-600
Manufacturers WeEn
Logo WeEn
Description ultrafast power diode
Datasheet BYV25F-600 DatasheetBYV25F-600 Datasheet (PDF)

BYV25F-600 Enhanced ultrafast power diode Rev.03 - 5 March 2018 Product data sheet 1. General description Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • High thermal cycling performance • Low thermal resistance • Low on-state losses • Soft recovery characteristic 3. Applications • Dual Mode (DCM and CCM) PFC • Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter.

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BYV25F-600 Enhanced ultrafast power diode Rev.03 - 5 March 2018 Product data sheet 1. General description Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • High thermal cycling performance • Low thermal resistance • Low on-state losses • Soft recovery characteristic 3. Applications • Dual Mode (DCM and CCM) PFC • Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 126 °C; Fig. 1; Fig. 2 IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 126 °C; current square-wave pulse IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 3 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3 Symbol Parameter Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Conditions IF = 5 A; Tj = 25 °C; Fig. 5 IF = 5 A; Tj = 150 °C; Fig. 5 IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 6 Values Unit 600 V 5 A 10 A 60 A 66 A Min Typ Max Unit - 1.3 1.9 V - 1.1 1.7 V - 17.5 35 ns WeEn Semiconductors BYV25F-600 Enhanced ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 K cathode 2 A anode mb K mounting base; cathode Simplified outline mb Graphic symbol K A 001aaa020 12 TO-220AC (SOD59) 6. Ordering information Table 3. Ordering information Type number Package Name Description BYV25F-600 TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC 7. Marking Table 4. Marking codes Type number BYV25F-600 Marking codes BYV25F-600 Version SOD59 BYV25F-600 Product data sheet All information provided in this document is subject to legal disclaimers. 5 March 2018 © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 11 WeEn Semiconductors BYV25F-600 Enhanced ultrafast power diode 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM repetitive peak reverse voltage VRWM crest working reverse voltage VR reverse voltage DC IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 126 °C; Fig. 1; Fig. 2 IFRM repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 126 °C; current square-wave pulse IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse; forward current Fig. 3 tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3 Tstg storage temperature Tj junction temperature Values Unit 600 V 600 V 600 V 5 A 10 A 60 A 66 A -40 to 150 °C 150 °C IF(AV) = IF(RMS) × √δ Vo = 1.499 V; Rs = 0.041 Ω Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values a = f.


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