Document
BYV25F-600
Enhanced ultrafast power diode
Rev.03 - 5 March 2018
Product data sheet
1. General description
Enhanced ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package.
2. Features and benefits
• High thermal cycling performance • Low thermal resistance • Low on-state losses • Soft recovery characteristic
3. Applications
• Dual Mode (DCM and CCM) PFC • Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Conditions
Absolute maximum rating
VRRM
repetitive peak reverse voltage
IF(AV)
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 126 °C;
Fig. 1; Fig. 2
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 μs; Tmb ≤ 126 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
forward current
Fig. 3
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3
Symbol Parameter
Static characteristics
VF
forward voltage
Dynamic characteristics
trr
reverse recovery time
Conditions
IF = 5 A; Tj = 25 °C; Fig. 5 IF = 5 A; Tj = 150 °C; Fig. 5
IF = 1 A; VR = 30 V; dIF/dt = 100 A/μs; Tj = 25 °C; Fig. 6
Values
Unit
600
V
5
A
10
A
60
A
66
A
Min Typ Max Unit
-
1.3 1.9 V
-
1.1 1.7 V
-
17.5 35
ns
WeEn Semiconductors
BYV25F-600
Enhanced ultrafast power diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
mb
K
mounting base; cathode
Simplified outline
mb
Graphic symbol
K
A
001aaa020
12 TO-220AC (SOD59)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BYV25F-600
TO-220AC plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220AC
7. Marking
Table 4. Marking codes Type number BYV25F-600
Marking codes BYV25F-600
Version SOD59
BYV25F-600
Product data sheet
All information provided in this document is subject to legal disclaimers.
5 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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WeEn Semiconductors
BYV25F-600
Enhanced ultrafast power diode
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR
reverse voltage
DC
IF(AV)
average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 126 °C;
Fig. 1; Fig. 2
IFRM
repetitive peak forward
δ = 0.5 ; tp = 25 μs; Tmb ≤ 126 °C;
current
square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;
forward current
Fig. 3
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave pulse; Fig. 3
Tstg
storage temperature
Tj
junction temperature
Values
Unit
600
V
600
V
600
V
5
A
10
A
60
A
66
A
-40 to 150
°C
150
°C
IF(AV) = IF(RMS) × √δ Vo = 1.499 V; Rs = 0.041 Ω
Fig. 1. Forward power dissipation as a function of average forward current; square waveform; maximum values
a = f.