4Q Triac. Z0103NN0 Datasheet

Z0103NN0 Triac. Datasheet pdf. Equivalent

Part Z0103NN0
Description 4Q Triac
Feature Z0103NN0 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated ve.
Manufacture WeEn
Datasheet
Download Z0103NN0 Datasheet



Z0103NN0
Z0103NN0
4Q Triac
15 September 2018
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT223 surface-mountable plastic
package intended for applications requiring enhanced immunity to noise and direct interfacing to
logic level ICs and low power gate drivers.
2. Features and benefits
Direct interfacing to logic level ICs
Enhanced current surge capability
Enhanced noise immunity
High blocking voltage of 800V
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
Very sensitive gate in four quadrants
3. Applications
General purpose low power motor control
Home appliances
Industrial process control
Low power AC Fan controllers
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 9
Min Typ Max Unit
-
-
800 V
-
-
1
A
-
-
12.5 A
-
-
13.8 A
-
-
125 °C
0.2 -
3
mA



Z0103NN0
WeEn Semiconductors
Z0103NN0
4Q Triac
Symbol
Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dVcom/dt
rate of change of
commutating voltage
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 9
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 9
VD = 12 V; Tj = 25 °C; Fig. 11
IT = 1.4 A; Tj = 25 °C; Fig. 12
VDM = 536 V; Tj = 110 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit; Fig. 14
VD = 400 V; Tj = 110 °C; dIcom/
dt = 0.44 A/ms; gate open circuit
Min Typ Max Unit
0.2 -
3
mA
0.2 -
3
mA
0.2 -
5
mA
-
-
7
mA
-
1.3 1.6 V
80
-
-
V/µs
0.5 -
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
4
T2
main terminal 2
Simplified outline
4
123
SC-73 (SOT223)
Graphic symbol
T2
T1
G
sym051
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Z0103NN0
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Z0103NN0
Product data sheet
All information provided in this document is subject to legal disclaimers.
15 September 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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