Grade SCR. BT153B-1200T-A Datasheet

BT153B-1200T-A SCR. Datasheet pdf. Equivalent

Part BT153B-1200T-A
Description Automotive Grade SCR
Feature BT153B-1200T-A Automotive Grade SCR Rev.01 - 25 July 2019 Product data sheet 1. General descriptio.
Manufacture WeEn
Datasheet
Download BT153B-1200T-A Datasheet



BT153B-1200T-A
BT153B-1200T-A
Automotive Grade SCR
Rev.01 - 25 July 2019
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier
(SCR) in a TO-263 surface mountable plastic
package intended for use in applications
requiring very high inrush current capability
and high bidirectional blocking voltage
capability. This product is qualified to
AEC-Q101 standard for use in automotive
applications.
h RoHS
alogen-Free
AEC - Q101 Qualified
2. Features and benefits
High junction operating temperature capability (Tj(max) = 150 °C)
AEC-Q101 compliant
Planar passivated for voltage ruggedness and reliability
High voltage capacity
Very high current surge capability
Surface mountable package
3. Applications
Automotive battery charger, On Board Charger & Off Board Charger
DC motor control
Power converter
Solid State Relay (SSR)
Uninterruptible Power Supply (UPS)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Absolute maximum rating
VRRM
repetitive peak reverse
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Tj
junction temperature
Conditions
half sine wave; Tmb ≤ 119 °C;
Fig. 1; Fig. 2; Fig. 3
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Values
1200
47
350
385
150
Unit
V
A
A
A
°C



BT153B-1200T-A
WeEn Semiconductors
BT153B-1200T-A
Automotive Grade SCR
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7;
Fig. 8
VD = 12 V; Tj = 25 °C; Fig. 10
IT = 30 A; Tj = 25 °C; Fig. 11
VDM = 804 V; Tj = 150 °C; (VDM = 67%
of VDRM); gate open; exponential
waveform;
Min Typ Max Unit
-
-
50
mA
-
-
80
mA
-
-
1.3
V
1000 -
-
V/μs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
3
G
gate
mb
A
mounting base; connected to
anode
Simplified outline
TO-263 (D2PAK)
Graphic symbol
A
K
G
sym037
6. Ordering information
Table 3. Ordering information
Type number
Package
name
BT153B-1200T-A TO263
Orderable part number Packing
method
BT153B-1200T-AJ
Reel
Small packing Package
quantity
version
800
TO263N
Package
issue date
26-Sep-2016
7. Marking
Table 4. Marking codes
Type number
BT153B-1200T-A
Marking codes
BT153B-1200T-A
BT153B-1200T-A
Product data sheet
All information provided in this document is subject to legal disclaimers.
25 July 2019
© WeEn Semiconductors Co., Ltd. 2019 All rights reserved
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