Document
ACTT2X-800E
AC Thyristor Triac power switch
Rev.02 - 06 September 2019
Product data sheet
1. General description
Planar passivated AC Thyristor Triac power switch in a SOT186A (TO-220F) "full pack" plastic package with self-protective capabilities against low and high energy transients.
2. Features and benefits
• Clamping structure ensuring safe high over-voltage withstand capability • Direct interfacing with low power drivers and microcontrollers • Full cycle AC conduction • Isolated mounting base package • Over-voltage withstand capability to IEC 61000-4-5 • Pin compatible with standard triacs • Planar passivated for voltage ruggedness and reliability • Safe clamping capability for low energy over-voltage transients • Self-protective turn-on during high energy voltage transients • Sensitive gate for easy logic level triggering • Triggering in three quadrants only • Very high immunity to false turn-on by dV/dt
3. Applications
• AC fan, pump and compressor controls • Highly inductive, resistive and safety loads • Large and small appliances (White Goods) • Reversing induction motor controls
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 106 °C; Fig. 1; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 16.7 ms
full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5
Tj
junction temperature
VPP
peak pulse voltage
Tj = 25 °C; non-repetitive, off-state;
Fig. 6
Min Typ Max Unit
-
-
800 V
-
-
2
A
-
-
15.4 A
-
-
14
A
-
-
125 °C
-
-
2
kV
WeEn Semiconductors
ACTT2X-800E
AC Thyristor Triac power switch
Symbol
Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
VCL
clamping voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C; Fig. 8 VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C; Fig. 8 VD = 12 V; Tj = 25 °C; Fig. 10 IT = 3 A; Tj = 25 °C; Fig. 11 ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig. 13 VD = 400 V; Tj = 125 °C; IT(RMS) = 2 A; dVcom/dt = 10 V/µs; gate open circuit; Fig. 14; Fig. 15
Min Typ Max Unit
-
-
-
-
-
-
-
-
-
-
850 -
10
mA
10
mA
10
mA
25
mA
2
V
-
V
500 -
-
V/µs
3
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
LD
main terminal 1
2
CM
main terminal 2
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
mb
Graphic symbol
LD
G CM
003aaf296
1 23
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number Name
ACTT2X-800E
TO220F ACTT2X-800E,127
Packing method
Tube
ACTT2X-800E/DG TO220F ACTT2X-800E/DGQ
Tube
Small packing Package
quantity
version
50
SOT186A
50
SOT186A HF
Package issue date 14-Nov-2013
14-Nov-2013
ACTT2X-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
06 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
2 / 13
WeEn Semiconductors
ACTT2X-800E
AC Thyristor Triac power switch
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Th ≤ 106 °C; Fig. 1; Fig. 2; Fig. 3
ITSM
I2t dIT/dt
non-repetitive peak onstate current
I2t for fusing rate of rise of on-state current
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5
tp = 10 ms; sine-wave pulse IG = 20 mA
IGM PGM PG(AV) Tj VPP
peak gate current peak gate power average gate power junction temperature peak pulse voltage
t = 20 μs over any 20 ms period Tj = 25 °C; non-repetitive, off-state; Fig. 6
10 IT(RMS)
(A) 8
6
003aag680
3 IT(RMS)
(A) 2
Min Max Unit
-
800 V
-
2
A
-
15.4 A
-
14
A
-
0.98 A²s
-
100 A/µs
-
2
A
-
5
W
-
0.5 W
-
125 °C
-
2
kV
003aag681
106 °C
4 1
2
0 10-2
10-1
1
10
surge duration (s)
f = 50 Hz; Th = 106 °C
Fig. 1. RMS on-state current as a function of surge duration; maximum values
0
-50
0
50
100
150
Th (°C)
Fig. 2. RMS on-state current as a function of heatsink temperature; maximum values
ACTT2X-800E
Product data sheet
All information provided in this document is subject to legal disclaimers.
06 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
3 / 13
WeEn Semiconductors
ACTT2X-800E
AC Thyristor Triac power switch
5 Ptot (W)
4
3
conduction angle, α
(degrees)
30 60 90 120 180
form factor
a
2.816 1.