Hi-Com Triac. BTA225-600B Datasheet

BTA225-600B Triac. Datasheet pdf. Equivalent

Part BTA225-600B
Description 3Q Hi-Com Triac
Feature BTA225-600B 3Q Hi-Com Triac Rev.02 - 26 November 2019 Product data sheet 1. General description Pl.
Manufacture WeEn
Datasheet
Download BTA225-600B Datasheet



BTA225-600B
BTA225-600B
3Q Hi-Com Triac
Rev.02 - 26 November 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO220 plastic package intended for
use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will
commutate the full rated RMS current at the maximum rated junction temperature without the aid of
a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High blocking voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Less sensitive gate for very high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDRM
repetitive peak off-state
voltage
Conditions
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 91 °C; Fig. 1; Fig. 2;
Fig. 3
ITSM
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
Tj
junction temperature
Symbol Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
600 V
-
-
25 A
-
-
190 A
-
-
Min
-
-
Typ
209
125
Max
A
°C
Unit
2
18
50
mA
2
21
50
mA



BTA225-600B
WeEn Semiconductors
Symbol Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 25 A;
dVcom/dt = 20 V/μs; (without snubber
condition); gate open circuit; Fig. 12
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
mb
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
BTA225-600B
3Q Hi-Com Triac
Min Typ Max Unit
2
34
50
mA
-
31
60
mA
-
1.3 1.55 V
1000 4000 -
V/μs
-
44
-
A/ms
Graphic symbol
T2
T1
G
sym051
123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA225-600B
TO220
Orderable part number
BTA225-600B,127
Packing
method
Tube
Small packing Package
quantity
version
50
SOT78
Package
issue date
13-Jun-2008
BTA225-600B
Product data sheet
All information provided in this document is subject to legal disclaimers.
26 November 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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