Hi-Com Triac. BTA208X-800CT Datasheet

BTA208X-800CT Triac. Datasheet pdf. Equivalent

Part BTA208X-800CT
Description 3Q Hi-Com Triac
Feature BTA208X-800CT 3Q Hi-Com Triac Rev.01- 07 November 2019 Product data sheet 1. General description P.
Manufacture WeEn
Datasheet
Download BTA208X-800CT Datasheet



BTA208X-800CT
BTA208X-800CT
3Q Hi-Com Triac
Rev.01- 07 November 2019
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package. This
triac is intended for use in motor control circuits where very high blocking voltage can occur. Rated
junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where
"high junction operating temperature capability" is required.
2. Features and benefits
High junction operating temperature capability (Tj(max) = 150 °C)
Full cycle AC conduction
Over-voltage withstand capability to IEC 61000-4-5
Pin compatible with standard triacs
Planar passivated for voltage ruggedness and reliability
Protective self turn-on capability for high energy transients
Triggering in three quadrants only
Very high immunity to IEC 61000-4-4 fast transient
Package meets UL94V0 flammability requirement
Package is RoHS compliant
Package meets UL1557 isolation test requirement rated at 2500V RMS
3. Applications
AC fan, pump and compressor controls
Highly inductive, resistive and safety loads
Large and small appliances (White Goods)
Reversing induction motor controls e.g. vertical axis washing machines
Applications subject to high temperature (Tj(max) = 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol
VDRM
IT(RMS)
ITSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
Conditions
full sine wave; Th ≤ 103°C;
Fig.1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C; tp =20ms;
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp =16.7ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
-
-
800 V
-
-
8
A
-
-
80
A
-
-
88
A
-
-
150 °C
-
-
35
mA
-
-
35
mA



BTA208X-800CT
WeEn Semiconductors
Symbol Parameter
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 10 A; Tj = 25 °C; Fig. 10
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 536 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 400 V; Tj = 150 °C; IT(RMS) = 8 A;
dVcom/dt = 20 V/μs; (snubberless
condition); gate open circuit
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
2
T2
main terminal 2
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
mb
BTA208X-800CT
3Q Hi-Com Triac
Min Typ Max Unit
-
-
35
mA
-
-
40
mA
-
1.25 1.6 V
200 -
-
V/μs
100 -
-
V/μs
1
-
-
A/ms
Graphic symbol
T2
T1
G
sym051
1 23
6. Ordering information
Table 3. Ordering information
Type number Package Orderable part number
Name
BTA208X-800CT TO220F BTA208X-800CTQ
Packing
method
Tube
Small packing
quantity
50
Package
version
SOT186A
Package
issue date
14-Nov-2013
7. Marking
Table 4. Marking codes
Type number
BTA208X-800CT
Marking codes
BTA208X-800CT
BTA208X-800CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
07 November 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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