WNB199V5APTS

WNB199V5APTS Ultrafast power diode - Bare die Rev.01 - 02 April 2020 Product data sheet 1. General description Ultrafast power diode (Bare die after sawn). 2. Features and benefits Fast switching and soft reverse recovery characteristics Low forward voltage drop Low leakage current Low reverse recovery current Bare die 3. Quick reference data Table 1. Quick reference data Symbol VRRM* Parameter repetitive peak reverse voltage Conditions IF(AV)** average forward current δ = 0.5; square-wave pulse Static characteristics VF** forward voltage Dynamic characteristics IF = 60 A; Tj = 25 °C IF = 60 A; Tj = 150 °C trr** reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs; Tj = 25 °C Min Typ Max Unit - - 600 V - - 60 A - 1.55 2 V - - 1.6 V - - 55 ns 4. Ordering information Table 2. Ordering information Type number Orderable part number WNB199V5APTS WNB199V5APTSV Name Wafer Description Bare die on wafer Version Die WeEn Semiconductors WNB199V5APTS Ultrafast power diode - Bare die 5. Limiting values Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VRRM* repetitive peak reverse voltage VRWM* crest working reverse voltage VR* reverse voltage DC IF(AV)** average forward current δ = 0.5; square-wave pulse IFRM** repetitive peak forward δ = 0.5; tp = 25 μs; square-wave pulse current IFSM** non-repetitive peak forward current tp = 10 ms; Tj(in...