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BT151Y-650LTN

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SCR

BT151Y-650LTN SCR Rev.01 - 11 June 2020 Product data sheet 1. General description Planar passivated Silicon Controlled...


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BT151Y-650LTN

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BT151Y-650LTN SCR Rev.01 - 11 June 2020 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in IITO220 internally insulated plastic package intended for use in applications requiring good bidirectional blocking voltage and high current surge capability with high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits High junction operating temperature capability (Tj(max) = 150 °C) Good bidirectional blocking voltage capability High current surge capabilit High thermal cycling performance Planar passivated for voltage ruggedness and reliability Internally insulated package Isolated mounting base with 2500 V (RMS) isolation 3. Applications Protection circuit in Power Supplies for Consumer / Industrial / Medical Equipment Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak on- state current Tj junction temperature Conditions half sine wave; Tmb ≤ 123 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Values 650 12 120 132 150 Unit V A A A °C WeEn Semiconductors BT151Y-650LTN SCR Symbol Parameter Static charact...




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