power diode. WNB111C5APTS Datasheet

WNB111C5APTS diode. Datasheet pdf. Equivalent

Part WNB111C5APTS
Description Hyperfast power diode
Feature WNB111C5APTS Hyperfast power diode - Bare die 29 October 2017 1. General description Hyperfast powe.
Manufacture WeEn
Datasheet
Download WNB111C5APTS Datasheet



WNB111C5APTS
WNB111C5APTS
Hyperfast power diode - Bare die
29 October 2017
1. General description
Hyperfast power diode bare die
2. Features and benefits
Fast switching
Low leakage current
Low forward voltage drop
Soft recovery characteristic
Bare die
3. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM *
repetitive peak reverse
voltage
IF(AV)**
average forward
current
δ = 0.5; square-wave pulse
Static characteristics
VF **
forward voltage
IF = 15 A; Tj = 150 °C
Dynamic characteristics
trr **
reverse recovery time
IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C
4. Ordering information
Table 2. Ordering information
Type number
Package
Name
WNB111C5APTS
Wafer
Description
Bare die on wafer
Product data sheet
Min Typ Max Unit
-
-
600 V
-
-
15
A
-
1.4 2
V
-
13
18
ns
Version
Die



WNB111C5APTS
WeEn Semiconductors
WNB111C5APTS
5. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM *
repetitive peak reverse voltage
VRWM *
crest working reverse voltage
VR *
reverse voltage
DC
IF(AV)**
average forward current
δ = 0.5; square-wave pulse
IFRM**
repetitive peak forward current δ = 0.5; tp = 25 µs; square-wave pulse
IFSM**
non-repetitive peak forward
current
tp = 10 ms; Tj(init) = 25 °C; sine-wave
pulse
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse
Tstg**
storage temperature
Tj **
junction temperature
Min Max Unit
-
600 V
-
600 V
-
600 V
-
15
A
-
30
A
-
180 A
-
200 A
-65 175 °C
-
175 °C
WNB111C5APTS
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2017
© WeEn Semiconductors Co., Ltd. 2017. All rights reserved
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