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BYQ28X-200E

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Dual ultrafast power diode

BYQ28X-200E Dual ultrafast power diodes 17 July 2017 Product data sheet 1. General description Dual ultrafast power di...


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BYQ28X-200E

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Description
BYQ28X-200E Dual ultrafast power diodes 17 July 2017 Product data sheet 1. General description Dual ultrafast power diodes in a SOT186A (TO-220F) isolated plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability. 2. Features and benefits Fast switching Guaranteed ESD capability High thermal cycling performance Isolated package Low on-state losses Soft recovery minimizes power-consuming oscillations 3. Applications Output rectifiers in high-frequency switched-mode power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VR reverse voltage DC IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 92 °C; SQW; current per diode IFSM non-repetitive peak tp = 10 ms; Tj(init) = 25 °C; SIN; per forward current diode tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode Static characteristics VF forward voltage IF = 5 A; Tj = 25 °C; Fig. 4 IF = 5 A; Tj = 150 °C; Fig. 4 IF = 10 A; Tj = 25 °C; Fig. 4 Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; ramp recovery; Fig. 5 Min Typ Max Unit - - 200 V - - 10 A - - 50 A - - 55 A - 0.95 1.1 V - 0.8 0.895 V - 1.1 1.25 V - 15 25 ns WeEn Semiconductors 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 A1 anode 1 2 K cathode 3 A2 anode 2 mb n.c. mounting base; isolated Simplified outline mb BYQ28X-200E ...




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