Dual ultrafast power diode
BYQ28X-200E
Dual ultrafast power diodes
17 July 2017
Product data sheet
1. General description
Dual ultrafast power di...
Description
BYQ28X-200E
Dual ultrafast power diodes
17 July 2017
Product data sheet
1. General description
Dual ultrafast power diodes in a SOT186A (TO-220F) isolated plastic package. These diodes are rugged with a guaranteed electrostatic discharge voltage capability.
2. Features and benefits
Fast switching Guaranteed ESD capability High thermal cycling performance Isolated package Low on-state losses Soft recovery minimizes power-consuming oscillations
3. Applications
Output rectifiers in high-frequency switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VR
reverse voltage
DC
IFRM
repetitive peak forward δ = 0.5 ; tp = 25 µs; Th ≤ 92 °C; SQW;
current
per diode
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; SIN; per
forward current
diode
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode
Static characteristics
VF
forward voltage
IF = 5 A; Tj = 25 °C; Fig. 4
IF = 5 A; Tj = 150 °C; Fig. 4
IF = 10 A; Tj = 25 °C; Fig. 4
Dynamic characteristics
trr
reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs;
Tj = 25 °C; ramp recovery; Fig. 5
Min Typ Max Unit
-
-
200 V
-
-
10
A
-
-
50
A
-
-
55
A
-
0.95 1.1 V
-
0.8 0.895 V
-
1.1 1.25 V
-
15
25
ns
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
A1
anode 1
2
K
cathode
3
A2
anode 2
mb
n.c.
mounting base; isolated
Simplified outline
mb
BYQ28X-200E
...
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