PHE13003C

PHE13003C NPN power transistor 13 October 2016 Product data sheet 1. General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) plastic package. 2. Features and benefits Fast switching High typical DC current gain High voltage capability of 700 V Very low switching and conduction losses 3. Applications Compact fluorescent lamps (CFL) Low power electronic lighting ballasts Off-line self-oscillating power supplies (SOPS) for battery charging 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions IC collector current DC Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1 VCESM collector-emitter peak VBE = 0 V voltage Static characteristics hFE DC current gain IC = 0.5 A; VCE = 2 V; Tlead = 25 °C IC = 1 A; VCE = 2 V; Tlead = 25 °C Min Typ Max Unit - - 1.5 A - - 2.1 W - - 700 V 8 17 25 5 9 15 WeEn Semiconductors PHE13003C NPN power transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter Simplified outline 321 TO-92 (SOT54) Graphic symbol C B E sym123 6. Ordering information Table 3. Ordering information Type number Package Name PHE13003C TO-92 Description plastic single-ended leaded (through hole) package; 3 leads Version SOT54 PHE13003C Product data sheet All information provided in this document is subject to legal disclaimers. 13 October 2016 © WeEn Semico...