SCR. TYN30Y-800T Datasheet

TYN30Y-800T SCR. Datasheet pdf. Equivalent

Part TYN30Y-800T
Description SCR
Feature TYN30Y-800T SCR Rev.01 - 09 September 2019 Product data sheet 1. General description Planar passiv.
Manufacture WeEn
Datasheet
Download TYN30Y-800T Datasheet



TYN30Y-800T
TYN30Y-800T
SCR
Rev.01 - 09 September 2019
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use
in applications requiring very high inrush current capability, high thermal cycling performance and
high junction temperature capability (Tj(max) = 150 °C).
2. Features and benefits
AC power control
High blocking voltage capability
High thermal cycling performance
Planar passivated for voltage ruggedness and reliability
High immunity to false turn-on by dV/dt
Internally insulated package
Internally isolated mounting base
High junction operating temperature capability (Tj(max) = 150 °C)
Package meets UL94V0 flammability requirement
Package is RoHS compliant
IEC 61000-4-4 fast transient
3. Applications
Capacitive Discharge Ignition (CDI)
Crowbar protection
Inrush protection
Motor control
Voltage regulation
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VDRM
IT(RMS)
ITSM
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
half sine wave; Tmb ≤ 114 °C;
Fig. 1; Fig. 2; Fig. 3
half sine wave; Tj(init) = 25 °C; tp = 10 ms;
Fig 4; Fig 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
Values
Unit
800
V
30
A
350
A
385
A
150
°C



TYN30Y-800T
WeEn Semiconductors
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
Conditions
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 60 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 150 °C; exponential
waveform; gate open circuit
TYN30Y-800T
SCR
Min Typ Max Unit
6
-
15 mA
-
-
60 mA
-
1.3 1.5 V
1000 -
-
V/μs
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
cathode
2
A
anode
3
G
gate
mb
n.c.
mounting base; isolated
Simplified outline
Graphic symbol
A
K
G
sym037
1 23
IITO-220
6. Ordering information
Table 3. Ordering information
Type number
Package Orderable part number
Name
TYN30Y-800T
IITO220 TYN30Y-800TQ
Packing
method
Tube
Small packing
quantity
50
Package
version
IITO220E
Package
issue date
15-Dec-2017
TYN30Y-800T
Product data sheet
All information provided in this document is subject to legal disclaimers.
09 September 2019
© WeEn Semiconductors Co., Ltd. 2019. All rights reserved
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