RECTIFIER DIODES. BYV96D Datasheet

BYV96D DIODES. Datasheet pdf. Equivalent

Part BYV96D
Description AVALANCHE FAST RECOVERY RECTIFIER DIODES
Feature www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 BYV95A - BYV96E PRV : 200 - 1000 .
Manufacture EIC
Datasheet
Download BYV96D Datasheet



BYV96D
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
BYV95A - BYV96E
PRV : 200 - 1000 Volts
Io : 1.5 Amperes
AVALANCHE FAST RECOVERY
RECTIFIER DIODES
DO-15
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-15 Molded plastic
* Epoxy : UL94V-0 rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.4 gram
0.142 (3.6)
0.102 (2.6)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.300 (7.6)
0.230 (5.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Min. Avalanche Breakdown Voltage @ 100 μA
Maximum Average Forward Rectified Current
Lead Length 10 mm. ; Ttp = 65 °C
Peak Forward Surge Current , 10 ms single half sine wave
superimposed on rated load
Maximum Forward Voltage at I F = 3.0 Amps.
Maximum DC Reverse Current
T J = 25 °C
at Rated DC Blocking Voltage
T J = 165 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNIT
VRRM
200
400
600
800 1000 V
VRMS
140
280
420
560
700
V
VDC
200
400
600
800 1000 V
VBR(min.)
300
500
700
900 1100 V
IF(AV)
1.5
A
IFSM
VF
IR
IR(H)
Trr
RθJA
TJ
TSTG
35
1.6
5.0
150
250
300
50
175
- 65 to + 175
A
V
μA
μA
ns
°C/W
°C
°C
Notes :
(1) Measured with F = 0.5A, IR = 1.0A, Irr = 0.25A
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounte
Page 1 of 2
Rev. 04 : May 11, 2010



BYV96D
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686
SGS TH07/1033
RATING AND CHARACTERISTIC CURVES ( BYV95A - BYV96E )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
+
50 Vdc
(approx)
D.U.T.
1Ω
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
Trr
+ 0.5
0
- 0.25
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
1
FIG.2 - FORWARD CURRENT DERATING CURVE
1.5
1.2
0.9
0.6
0.3
0
0
25
50
75
100 125 150 175
TIE-POINT TEMPERATURE, ( °C)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
10
TJ = 100 °C
1.0
TJ = 25 °C
0.1
Pulse Width = 300 μs
2% Duty Cycle
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
50
40
30
20
10
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 50Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 125 °C
1.0
0.1
TJ = 25 °C
0.01
0
20 40
60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 04 : May 11, 2010





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