SILICON RECTIFIER. HFM106 Datasheet

HFM106 RECTIFIER. Datasheet pdf. Equivalent

Part HFM106
Description HIGH EFFICIENCY SILICON RECTIFIER
Feature SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURR.
Manufacture Rectron
Datasheet
Download HFM106 Datasheet



HFM106
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
HFM101
THRU
HFM108
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* P/N suffix V means AEC-Q101 qualified
* P/N suffix V means Halogen-free
DO-214AC
MECHANICAL DATA
* Epoxy: Device has UL flammability classification 94V-O
* Mounting position: Any
* Weight: 0.057 gram
0.067 (1.70 )
0.051 (1.29 )
0.180 ( 4.57 )
0.160 ( 4.06 )
0.110 ( 2.79 )
0.086 ( 2.18 )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
resistive or inductive load.
0.091 ( 2.31 )
0.067 ( 1.70 )
0.059 ( 1.50 )
0.035 ( 0.89 )
0.012 ( 0.305 )
0.006 ( 0.152 )
0.209 ( 5.31 )
0.185 ( 4.70 )
0.008 ( 0.203 )
0.004 ( 0.102 )
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (@ TA=25 OC unless otherwise noted)
RATINGS
SYMBOL HFM101 HFM102 HFM103 HFM104 HFM105
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
Maximum RMS Voltage
VRMS
35
70
140
210
280
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TA = 50OC
VDC
50
100
200
300
400
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
30
$VSSFOU4RVBSBE5JNF
*U

Typical Thermal Resistance (Note 1)
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 2)
Operating Temperature Range
Storage Temperature Range
RθJL
RθJA
CJ
TJ
TSTG
27
75
15
-55 to + 150
-55 to + 150
HFM106
600
420
600
HFM107
800
490
800
12
HFM108 UNITS
1000 Volts
700 Volts
1000 Volts
Amps
Amps
A2S
0C/W
0C/W
pF
0C
0C
ELECTRICAL CHARACTERISTICS(@TA=25 OC unless otherwise noted)
CHARACTERISTICS
SYMBOL HFM101 HFM102 HFM103 HFM104 HFM105
Maximum Instantaneous Forward Voltage at 1.0A DC
VF
Maximum Full Load Reverse Current, Full
cycle Average TA =55OC
IR
Maximum Average Reverse Current
@TA = 25oC
at Rated DC Blocking Voltage
@TA = 150oC
Maximum Reverse Recovery Time (Note 4)
trr
1.0
1.3
50
5
400
50
NOTES : 1. Thermal Resistance : Mounted on PCB.
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
4. Test Conditions: IF= 0.5A, IR= -1.0A, IRR= -0.25A.
HFM106
HFM107
1.7
75
HFM108 UNITS
Volts
μA
μA
μA
nSec
2017-01
REV:B



HFM106
RATING AND CHARACTERISTICS CURVES ( HFM101 THRU HFM108 )
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(+)
25 Vdc
(approx)
(-)
D.U.T
1
NON-
INDUCTIVE
(-)
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLOSCOPE
(NOTE 1)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR 20/1 ns/cm
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
1.0
1000
0.8
0.6
0.4
0.2
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
0 25 50 75
100 125 150 175
AMBIENT TEMPERATURE, (OC)
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
100 TA = 150 OC
10
1.0 TA = 25 O C
0.1
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG.3 MAXIMUM REVERSE
CHARACTERISTICS





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