Operational Amplifier. TLE2161B Datasheet

TLE2161B Amplifier. Datasheet pdf. Equivalent

Part TLE2161B
Description Micro Power Operational Amplifier
Feature TLE2161, TLE2161A, TLE2161B EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE µPOWER OPERATIONAL AMPLIFIERS SLO.
Manufacture etcTI
Datasheet
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TLE2161B
TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
µPOWER OPERATIONAL AMPLIFIERS
SLOS049D – NOVEMBER 1989 – REVISED MAY 1996
D Excellent Output Drive Capability
VO = ± 2.5 V Min at RL = 100 ,
VCC± = ± 5 V
VO = ± 12.5 V Min at RL = 600 ,
VCC± = ± 15 V
D Low Supply Current . . . 280 µA Typ
D Decompensated for High Slew Rate and
Gain-Bandwidth Product
AVD = 0.5 Min
Slew Rate = 10 V/µs Typ
Gain-Bandwidth Product = 6.5 MHz Typ
description
The TLE2161, TLE2161A, and TLE2161B are
JFET-input, low-power, precision operational
amplifiers manufactured using the Texas
Instruments Excalibur process. Decompensated
for stability with a minimum closed-loop gain of 5,
these devices combine outstanding output drive
capability with low power consumption, excellent
dc precision, and high gain-bandwidth product.
D Wide Operating Supply Voltage Range
VCC ± = ± 3.5 V to ± 18 V
D High Open-Loop Gain . . . 280 V/mV Typ
D Low Offset Voltage . . . 500 µV Max
D Low Offset Voltage Drift With Time
0.04 µV/Month Typ
D Low Input Bias Current . . . 5 pA Typ
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
LOAD RESISTANCE
10
VCC ± = ± 5 V
TA = 25°C
8
6
In addition to maintaining the traditional JFET
4
advantages of fast slew rates and low input bias
and offset currents, the Excalibur process offers
outstanding parametric stability over time and
2
temperature. This results in a device that remains
precise even with changes in temperature and
over years of use.
0
10
100
1k
10 k
RL – Load Resistance –
AVAILABLE OPTIONS
TA
0°C
to
70°C
– 40°C
to
85°C
– 55°C
to
125°C
VIOmax
AT 25°C
500 µV
1.5 mV
3 mV
500 µV
1.5 mV
3 mV
500 µV
1.5 mV
3 mV
SMALL
OUTLINE
(D)
TLE2161ACD
TLE2161CD
TLE2161AID
TLE2161ID
TLE2161AMD
TLE2161MD
PACKAGE
CHIP
CARRIER
(FK)
CERAMIC
DIP
(JG)
TLE2161AMFK
TLE2161MFK
TLE2161BMJG
TLE2161AMJG
TLE2161MJG
PLASTIC
DIP
(P)
TLE2161BCP
TLE2161ACP
TLE2161CP
TLE2161BIP
TLE2161AIP
TLE2161IP
TLE2161BMP
TLE2161AMP
TLE2161MP
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
Copyright © 1996, Texas Instruments Incorporated
1



TLE2161B
TLE2161, TLE2161A, TLE2161B
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE
µPOWER OPERATIONAL AMPLIFIERS
SLOS049D – NOVEMBER 1989 – REVISED MAY 1996
description (continued)
A variety of available options includes small-outline packages and chip-carrier versions for high-density system
applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized
for operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full military
temperature range of – 55°C to 125°C.
D, JG, OR P PACKAGE
(TOP VIEW)
FK PACKAGE
(TOP VIEW)
OFFSET N1 1
IN – 2
IN + 3
VCC – 4
8 NC
7 VCC +
6 OUT
5 OFFSET N2
NC
IN –
NC
IN +
NC
3 2 1 20 19
4
18
5
17
6
16
7
15
8
14
9 10 11 12 13
NC
VCC +
NC
OUT
NC
NC – No internal connection
equivalent schematic
VCC +
Q9 Q13
Q32
Q4
IN +
Q14
Q16
IN –
Q3
Q1
Q5
Q7
Q11
Q6
C1
R3
2.4 k
Q10
C3
1.6 pF
15 pF
C2 15 pF
Q2
Q8
OFFSET N1
OFFSET N2
R1
1.1 k
R4
R2
R5
55 k1.1 k60 k
Q15
Q12
All component values are nominal.
Q18
Q19
Q25
Q27
Q23
Q17
R6
2.7 k
Q28
Q20
Q24
Q21
Q26
Q22
VCC
Q29
Q33 Q36
Q37
Q34
Q35
Q30
Q38
Q39
Q31
R7
600
Q40
Q43
R8
20
R9
OUT
100
Q42
Q41
2
POST OFFICE BOX 655303 DALLAS, TEXAS 75265





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