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TLE2022 Data Sheet

EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIER

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TLE2022
TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D Supply Current . . . 300 μA Max D High Unity-Gain Bandwidth . . . 2 MHz Typ D High Slew Rate . . . 0.45 V/μs Min D Supply-Current Change Over Military Temp Range . . . 10 μA Typ at VCC ± = ± 15 V D Specified for Both 5-V Single-Supply and ±15-V Operation D Phase-Reversal Protection D High Open-Loop Gain . . . 6.5 V/μV (136 dB) Typ D Low Offset Voltage . . . 100 μV Max D Offset Voltage Drift With Time 0.005 μV/mo Typ D Low Input Bias Current . . . 50 nA Max D Low Noise Voltage . . . 19 nV/√Hz Typ description The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth. The complementary bipolar Excalibur process utilizes isolated vertica.
TLE2022

Download TLE2022 Datasheet
TLE202x, TLE202xA, TLE202xB, TLE202xY EXCALIBUR HIGH-SPEED LOW-POWER PRECISION OPERATIONAL AMPLIFIERS SLOS191D − FEBRUARY 1997 − REVISED NOVEMBER 2010 D Supply Current . . . 300 μA Max D High Unity-Gain Bandwidth . . . 2 MHz Typ D High Slew Rate . . . 0.45 V/μs Min D Supply-Current Change Over Military Temp Range . . . 10 μA Typ at VCC ± = ± 15 V D Specified for Both 5-V Single-Supply and ±15-V Operation D Phase-Reversal Protection D High Open-Loop Gain . . . 6.5 V/μV (136 dB) Typ D Low Offset Voltage . . . 100 μV Max D Offset Voltage Drift With Time 0.005 μV/mo Typ D Low Input Bias Current . . . 50 nA Max D Low Noise Voltage . . . 19 nV/√Hz Typ description The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth. The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices. The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use. This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices t.


TLE2021Y TLE2022 TLE2022A


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